TLUR5400, TLUR5401
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 16-Mar-15
1
Document Number: 83055
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Universal LED in Ø 5 mm Tinted Diffused Package
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
•Package: 5 mm
• Product series: standard
• Angle of half intensity: ± 30°
FEATURES
• For DC and pulse operation
• Luminous intensity categorized
• Standard T-1¾ package
• TLUR540. with stand-offs
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• General indicating and lighting purposes
Note
(1)
In one packing unit I
Vmin.
/I
Vmax.
≤ 0.5
19223
PARTS TABLE
PART COLOR
LUMINOUS INTENSITY
(mcd)
at I
F
(mA)
WAVELENGTH
(nm)
at I
F
(mA)
FORWARD VOLTAGE
(V)
at I
F
(mA)
TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
TLUR5400 Red 4 15 - 10 - 630 - 10 - 2 3 20 GaAsP on GaAs
TLUR5400-AS12Z Red 4 15 - 10 - 630 - 10 - 2 3 20 GaAsP on GaAs
TLUR5401 Red 4 15 32 10 - 630 - 10 - 2 3 20 GaAsP on GaAs
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C unless otherwise specified)
TLUR540.
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
6V
DC forward current I
F
20 mA
Surge forward current t
p
≤ 10 μs I
FSM
1A
Power dissipation T
amb
≤ 65 °C P
V
60 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-55 to +100 °C
Soldering temperature t ≤ 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/ambient R
thJA
500 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLUR540., RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA
TLUR5400 I
V
415 mcd
TLUR5401 I
V
41532mcd
Dominant wavelength I
F
= 10 mA λ
d
- 630 - nm
Peak wavelength I
F
= 10 mA λ
p
- 640 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 30- deg
Forward voltage I
F
= 20 mA V
F
-23V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF
