OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI4884BDY-T1-E3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
Vishay Siliconix
Si4884BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.001
10
50
0.00 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS I -
S
1
0.1
0.01
- 0.9
- 0.6
- 0.3
0.0
0.3
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
)
h
t(
S
G
)
V(
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0
.
0
5
2345678 9 10
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω ecnatsiseR-nO ecruoS-ot-niarD -)
T
J
= 25 °C
T
J
= 125 °C
I
D
= 10 A
0
60
100
20
40
)
W
(
r
e
w
o
P
Time (s)
80
1 10 0.1 0.01 0.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
I - Drain Current (A)
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V >
GS
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
D
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
www.vishay.com
5
Vishay Siliconix
Si4884BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
4
8
12
16
20
0 255075100125150
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Power, Junction-to-Foot
0.0
1.1
2.2
3.3
4.4
5
.
5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
r (W)
ew
o
P
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
.
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
r (W)
ew
o
P
www.vishay.com
6
Document Number: 73454
S09-0228-Rev. C, 09-Feb-09
Vishay Siliconix
Si4884BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73454.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
1 10 10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT ev
i
tceffE de
z
ilamroN
ecnadepmI
la
mre
hT
P1-P3P4-P6P7-P9P10-P10

SI4884BDY-T1-E3

Mfr. #:
Buy SI4884BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet