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V10KM120DUHM3/I

P1-P3P4-P5
V10KM120DU
www.vishay.com
Vishay General Semiconductor
Revision: 18-Jul-2018
1
Document Number: 87537
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.54 V at I
F
= 2.5 A
DESIGN SUPPORT TOOLS
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
With infinite heatsink
(2)
Free air, mounted on recommended pad area
(3)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
θJA
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
120 V
I
FSM
100 A
V
F
at I
F
= 5 A (T
A
= 125 °C) 0.62 V
T
J
max. 175 °C
Package FlatPAK 5 x 6
Circuit configuration Separated cathode
4
3
1
2
5
6
8
7
3
1
2
5
6
8
7
FlatPAK 5 x 6
1 and / or 2
3 and / or 4
7, 8
5, 6
Available
Models
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10KM120DU UNIT
Device marking code V10M12D
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum DC forward current per diode
I
F(AV)
(1)
5A
I
F(AV)
(2)
2.5 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
100 A
Operating junction temperature range T
J
(3)
-40 to +175 °C
Storage temperature range T
STG
-55 to +175 °C
V10KM120DU
www.vishay.com
Vishay General Semiconductor
Revision: 18-Jul-2018
2
Document Number: 87537
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width ≤ 5 ms
Notes
(1)
The heat generated must be less than thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
θJA
(2)
Free air, mounted on recommended copper pad area; thermal resistance R
θJA
- junction to ambient
(3)
Mounted on infinite heatsink; thermal resistance R
θJM
- junction-to-mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.64 -
V
I
F
= 5.0 A 0.81 0.89
I
F
= 2.5 A
T
A
= 125 °C
0.54 -
I
F
= 5.0 A 0.62 0.70
Reverse current per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
0.01 -
mA
T
A
= 125 °C 0.8 -
V
R
= 120 V
T
A
= 25 °C
I
R
(2)
-0.35
T
A
= 125 °C 1.6 6
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
450 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TYP. MAX. UNIT
Thermal resistance per diode
R
θJA
(1)(2)
100 -
°C/W
R
θJM
(3)
3.0 4.0
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V10KM120DU-M3/H 0.10 H 1500 7" diameter plastic tape and reel
V10KM120DU-M3/I 0.10 I 6000 13" diameter plastic tape and reel
V10KM120DUHM3/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
V10KM120DUHM3/I
(1)
0.10 I 6000 13" diameter plastic tape and reel
V10KM120DU
www.vishay.com
Vishay General Semiconductor
Revision: 18-Jul-2018
3
Document Number: 87537
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1
2
3
4
5
6
0 255075100125150175
Average Forward Rectied Current (A)
T
M
measured at
cathode terminal
mount typical values
R
thJA
= 100 °C/W
R
thJM
= 3 °C/W
Ambient / Mount Temperature (°C)
0.0
1.0
2.0
3.0
4.0
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
T
J
= 100 °C
T
J
= 175 °C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 175 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= -40 °C
T
J
= 150 °C
T
J
= 125 °C
1
10
100
1000
10 000
0.1 1 10 100 1000
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction-to-ambient
P1-P3P4-P5

V10KM120DUHM3/I

Mfr. #:
Buy V10KM120DUHM3/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 120V 5A dual TMBS AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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