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FDZ7296

P1-P3P4-P6
FDZ7296 Rev C1
(W)
Typical Characteristics
0
5
10
15
20
0 0.5 1 1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
3.5V
2.5V
V
GS
= 10.0V
6.0V
4.0V
4.5V
0
1
2
3
4
0 5 10 15 20
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
4.5V
4.0V
6.0V
3.5V
10.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 11A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
2 4 6 8 10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
=5.5 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
1 1.5 2 2.5 3 3.5 4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ
729
6
30
V
N
-
Channel
PowerTrench
BGA
MOSFET
FDZ7296 Rev C1 (W)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 11A
V
DS
= 10V
15V
20V
0
400
800
1200
1600
2000
0 5 10 15 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 108
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 108°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 108 /W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ
729
6
30
V
N
-
Channel
PowerTrench
BGA
MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx
®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
®
FastvCore™
FPS™
FRFET
®
Global Power Resource
SM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Motion-SPM™
OPTOLOGIC
®
OPTOPLANAR
®
®
PDP-SPM™
Power220
®
Power247
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
®
UniFET™
VCX™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
P1-P3P4-P6

FDZ7296

Mfr. #:
Buy FDZ7296
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Ch PowerTrench BGA MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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