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PT334-6C
P1-P3
P4-P6
P7-P9
LifecyclePhase:
Revision : 3
Expired Period: Forever
Release Date:2015-09-29 10:51:16.0
1
Copyright ©
2010, Everligh
t All Rights Rese
rved. Relea
se Date : Spe.17
.2015
.Issue No:DPT-000
0185
Rev.3
www
.everlight.com
5mm Phototransistor
PT334-6C
Features
․
Fast response tim
e
․
High photo sensitiv
ity
․
Pb free
․
The product itself will rem
ain within RoHS complian
t version.
Descri
ption
․
PT334-6C
is a high speed and high sensiti
ve NPN silicon
NPN epitaxial planar phototransistor m
olded in a standard 5 mm
package.
Due to its water clear epox
y the device is sensitive to i
nfrared radiation.
.
A
pplications
․
Infrared applied s
ystem
․
Camera
․
Printer
․
Cockroach catc
her
LifecyclePhase:
Revision : 3
Expired Period: Forever
Release Date:2015-09-29 10:51:16.0
DATASHEET
5mm Phototransistor
PT334-6C
2
Copyright ©
2010, Everligh
t All Rights Rese
rved. Relea
se Date : Sep.17
.2015
. Issue No: DPT-00
00185
Rev.3
www
.everlight.com
Device Selection Guide
Chip
Materials
Lens Color
Silicon
Water clear
A
bsolute Max
imum Ratings (T
a=25
℃
)
Parameter
Symbol
Rating
Unit
Collector-Em
itter V
oltage
V
CEO
30
V
Emitter-Collector-Voltage
V
ECO
5
V
Collector Current
I
C
20
mA
Operating T
emperature
T
opr
-40~+85
°
C
S
torage T
emperature
T
stg
-40~ +100
°
C
Lead Soldering T
emper
ature
T
sol
260
°
C
Power Dissipation at
(or below)
25
℃
Free
Air
T
emperature
P
c
75
mW
Notes:
*1:Solderin
g time
≦
5 seconds.
LifecyclePhase:
Revision : 3
Expired Period: Forever
Release Date:2015-09-29 10:51:16.0
DATASHEET
5mm Phototransistor
PT334-6C
3
Copyright ©
2010, Everligh
t All Rights Rese
rved. Relea
se Date : Sep.17
.2015
. Issue No: DPT-00
00185
Rev.3
www
.everlight.com
Electro
-Optical Characteristics (T
a=25
℃
)
Parameter
Symbol
Min.
T
y
p.
Max.
Unit
Condition
Collector –
Emitter
Breakdown V
oltage
BV
CEO
30
-----
-----
V
I
C
=100
μ
A
Ee=0mW
/cm
2
Emitter-Collector
Breakdown V
oltage
BV
ECO
5
-----
-----
V
I
E
=100
μ
A
Ee=0mW
/cm
2
Collector-Em
itter
Saturation V
oltage
V
CE(sat)
-----
-----
0.4
V
I
C
=2mA
Ee=1mW
/cm
2
Rise Ti
me
t
r
-----
15
-----
μ
S
V
CE
=5V
I
C
=1mA
RL=1000
Ω
Fall Ti
me
t
f
-----
15
-----
Collector Dark
Current
I
CEO
-----
-----
100
nA
Ee=0mW
/cm
2
V
CE
=20V
On S
tate Collector Current
I
C(on)
1.77
3.5
-----
mA
Ee=1mW
/cm
2
V
CE
=5V
Rang Of S
pectral Bandwidth
λ
0.5
400
-----
1
100
nm
----
Wavelength of Peak Sensitivity
λ
P
-----
940
-----
nm
----
P1-P3
P4-P6
P7-P9
PT334-6C
Mfr. #:
Buy PT334-6C
Manufacturer:
Description:
Optical Sensors Phototransistors Phototransisto
Lifecycle:
New from this manufacturer.
Delivery:
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PT334-6C