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V60M120C-M3/4W

P1-P3P4-P4
V60M120C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Nov-17
1
Document Number: 87781
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.43 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
120 V
I
FSM
300 A
V
F
at I
F
= 30 A (T
A
= 125 °C) 0.69 V
T
J
max. 175 °C
Package TO-220AB
Diode variations Common cathode
TO-220AB
V60M120C
1
2
3
PIN 1
CASE
PIN 3
TMBS
®
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60M120C UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
60
A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
300
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
V60M120C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Nov-17
2
Document Number: 87781
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.51 -
V
I
F
= 15 A 0.68 -
I
F
= 30 A 0.86 0.97
I
F
= 5 A
T
A
= 125 °C
0.43 -
I
F
= 15 A 0.58 -
I
F
= 30 A 0.69 0.77
Reverse current per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
75 - μA
T
A
= 125 °C 6.4 - mA
V
R
= 120 V
T
A
= 25 °C - 500 μA
T
A
= 125 °C 10 35 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60M120C UNIT
Typical thermal resistance
(1)
per diode
R
JC
1.0
°C/Wper device 0.7
per device R
JA
(2)
52
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V60M120C-M3/4W 1.89 4W 50/tube Tube
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
Free air, without heatsink,
Rth
JA
= 52 °C/W
With heatsink, Rth
JC
= 0.7 °C/W
0
2
4
6
8
10
12
14
16
18
20
22
0 4 8 12 16 20 24 28 32 36
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
V60M120C
www.vishay.com
Vishay General Semiconductor
Revision: 09-Nov-17
3
Document Number: 87781
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
T
A
= 175 °C
0.001
0.01
0.1
1
10
100
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 175 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1
1
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t -
Pulse Duration (s)
Junction to Case
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.415 (10.54)
0.380 (9.65)
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.161 (4.08)
0.139 (3.53)
1
3
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
P1-P3P4-P4

V60M120C-M3/4W

Mfr. #:
Buy V60M120C-M3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 60A,120V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
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