TSA1765
High Voltage PNP Epitaxial Planar Transistor
Document Number:
DS_P0000259 1
Version: D15
PRODUCT SUMMARY
BV
-560V
BV
-560V
I
-150mA
V
-0.5V @ I
C
=-50mA,I
B
=-10mA
Features
● Low Saturation Voltages
● High Breakdown Voltage
Ordering Information
Part No. Package
Packing
TSA1765CW RPG
SOT-223
2.5Kpcs / 13” Reel
Note: “G” denotes for Halogen Free
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
CBO
-560 V
Collector-Emitter Voltage V
CEO
-560 V
Emitter-Base Voltage V
EBO
-7 V
Collector Current I
C
-150
mA Collector Current(Pulse) I
CP
-500
Base Current I
B
-50
Total Power Dissipation @ T
C
=25ºC P
tot
2 W
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
STG
- 55 to +150 °C
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Collector-Base Breakdown Voltage I
C
= -1mA, I
E
= 0 BV
CBO
-560 -- -- V
Collector-Emitter Breakdown Voltage
I
C
= -1mA, I
B
= 0 BV
CEO
-560 -- -- V
Emitter-Base Breakdown Voltage I
E
= -10uA, I
C
= 0 BV
EBO
-7 -- -- V
Collector Cutoff Current V
CB
= -560V, I
E
= 0 I
CBO
-- -- -100 nA
Emitter Cutoff Current V
EB
= -7V, I
C
= 0 I
EBO
-- -- -100 nA
Collector-Emitter Saturation Voltage
I
C
= -20mA, I
B
= -2mA V
CE(SAT)
1
-- -- -0.2
V
I
C
= -50mA, I
B
= -10mA V
CE(SAT)
2
-- -- -0.5
Base-Emitter Saturation Voltage I
C
= -50mA, I
B
= -10mA V
BE(SAT)
1
-- -- -1.0 V
Base-Emitter on Voltage V
CE
= -10V, I
C
= -50mA V
BE(ON)
-- -- -1.0 V
DC Current Transfer Ratio
V
CE
= -10V, I
C
= -1mA h
FE
1 150 -- --
V
CE
= -10V, I
C
= -50mA h
FE
2
80 -- 300
V
CE
= -10V, I
C
= -100mA h
FE
3
-- 15 --
Transition Frequency V
CE
= -20V, I
E
=-10mA f
T
50 -- -- MHz
Output Capacitance V
CB
= -20V, f=1MHz Cob -- -- 8 pF
1. Base
2. Collector
3. Emitter
