January 2012 Doc ID 17120 Rev 3 1/14
14
STAC2932F
RF power transistor
HF/VHF/UHF RF power N-channel MOSFETs
Features
■ Gold metallization
■ Excellent thermal stability
■ Common source push-pull configuration
■ P
OUT
= 300 W min. with 20 dB gain @ 175 MHz
■ In compliance with the 2002/95/EC European
directive
■ ST air cavity packaging technology - STAC
™
package
Description
The STAC2932F is a gold metallized N-channel
MOS field-effect RF power transistor, intended for
use in 50 V DC large signal applications up to 250
MHz.
The STAC2932F benefits from the latest
generation of efficient, patent-pending package
technology, otherwise known as STAC
™
.
Figure 1. Pin connection
1. Drain
2. Gate
3. Source
(Bottom side)
1
1
2
2
3
Table 1. Device summary
Order code Marking Base qty. Package Packaging
STAC2932FW STAC2932F
(1)
20 STAC244F Tray
1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.
www.st.com
