LTC4444HMS8E-5#PBF

LTC4444-5
10
44445fc
APPLICATIONS INFORMATION
At a particular switching frequency, the internal power loss
increases due to both AC currents required to charge and
discharge internal node capacitances and cross-conduc-
tion currents in the internal logic gates. The sum of the
quiescent current and internal switching current with no
load are shown in the Typical Performance Characteristics
plot of Switching Supply Current vs Input Frequency.
The gate charge losses are primarily due to the large AC
currents required to charge and discharge the capacitance
of the external MOSFETs during switching. For identical
pure capacitive loads C
LOAD
on TG and BG at switching
frequency f
IN
, the load losses would be:
P
CLOAD
= (C
LOAD
)(f)[(V
BOOST-TS
)
2
+ (V
CC
)
2
]
In a typical synchronous buck configuration, V
BOOST-TS
is equal to V
CC
– V
D
, where V
D
is the forward voltage
drop across the diode between V
CC
and BOOST. If this
drop is small relative to V
CC
, the load losses can be
approximated as:
P
CLOAD
= 2(C
LOAD
)(f
IN
)(V
CC
)
2
Unlike a pure capacitive load, a power MOSFETs gate
capacitance seen by the driver output varies with its V
GS
voltage level during switching. A MOSFETs capacitive load
power dissipation can be calculated using its gate charge,
Q
G
. The Q
G
value corresponding to the MOSFETs V
GS
value (V
CC
in this case) can be readily obtained from the
manufacturers Q
G
vs V
GS
curves. For identical MOSFETs
on TG and BG:
P
QG
= 2(V
CC
)(Q
G
)(f
IN
)
To avoid damage due to power dissipation, the LTC4444-5
includes a temperature monitor that will pull BG and TG
low if the junction temperature rises above 160°C. Normal
operation will resume when the junction temperature cools
to less than 135°C.
Bypassing and Grounding
The LTC4444-5 requires proper bypassing on the V
CC
and V
BOOST-TS
supplies due to its high speed switching
(nanoseconds) and large AC currents (Amperes). Careless
component placement and PCB trace routing may cause
excessive ringing.
To obtain the optimum performance from the LTC4444-5:
A. Mount the bypass capacitors as close as possible
between the V
CC
and GND pins and the BOOST and
TS pins. The leads should be shortened as much as
possible to reduce lead inductance.
B. Use a low inductance, low impedance ground plane
to reduce any ground drop and stray capacitance.
Remember that the LTC4444-5 switches greater than
3A peak currents and any significant ground drop will
degrade signal integrity.
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for
the input pin and the output power stage.
D. Keep the copper trace between the driver output pin
and the load short and wide.
E. Be sure to solder the Exposed Pad on the back side of
the LTC4444-5 package to the board. Correctly soldered
to a 2500mm
2
double sided 1oz copper board, the
LTC4444-5 has a thermal resistance of approximately
40°C/W for the MS8E package. Failure to make good
thermal contact between the exposed back side and
the copper board will result in thermal resistances far
greater than 40°C/W.
LTC4444-5
11
44445fc
TYPICAL APPLICATION
LTC3780 High Efficiency 36V to 72V V
IN
to 48V/6A Buck-Boost DC/DC Converter
Efficiency
PGOOD
SS
SENSE
+
SENSE
I
TH
V
OSENSE
SGND
RUN
FCB
PLLFLTR
PLLIN
STBYMD
BOOST1
TG1
SW1
V
IN
EXTV
CC
INTV
CC
BG1
PGND
BG2
SW2
TG2
BOOST2
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
LTC3780EG
10k
100
100
220k
V
OS
+
15k
220k
487k
1%
8.25k
1%
1000pF
100pF
47pF
V
IN
D5
0.1µF
100V
68pF
0.022µF
0.1µF
16V
2.2µF, 100V, TDK C4532X7R2A225MT
C1: SANYO 100ME100HC +T
C2, C3: SANYO 63ME220HC + T
D1: ON SEMI MMDL770T1G
D2: DIODES INC. 1N5819HW-7-F
D3, D4: DIODES INC. PDS560-13
D5: DIODES INC. MMBZ5230B-7-F
D6: DIODES INC. B1100-13-F
L1: SUMIDA CDEP147NP-100MC-125
R1, R2: VISHAY DALE WSL2512R0250FEA
0.1µF
16V
V
BIAS
10µF
10V
F
16V
0.22µF
16V
L1
10µH
2.2µF
100V
s4
C1
100µF
100V
V
IN
36V TO 72V
F
16V
0.1µF
16V
V
BIAS
V
BIAS
6V
D1
SENSE
+
SENSE
V
BIAS
D2
1
2
4
6
7
8
9
3
V
CC
GND
TG
BOOST
TINP
BINP
LTC4444-5
TSBG
+
2.2µF
100V
s8
C2,C3
220µF
63V
s2
V
OUT
48V
6A
+
R1
0.025
1W
44445 TA02a
D6
SENSE
+
SENSE
D3 D4
R2
0.025
1W
10
10W
V
OS
+
10
LOAD CURRENT (A)
95
EFFICIENCY (%)
96
97
98
21345
44445 TA02b
6
V
IN
= 36V
V
IN
= 48V
V
IN
= 72V
LTC4444-5
12
44445fc
PACKAGE DESCRIPTION
MS8E Package
8-Lead Plastic MSOP, Exposed Die Pad
(Reference LTC DWG # 05-08-1662 Rev I)
MSOP (MS8E) 0910 REV I
0.53 t 0.152
(.021 t .006)
SEATING
PLANE
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
6. EXPOSED PAD DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD
SHALL NOT EXCEED 0.254mm (.010") PER SIDE.
0.18
(.007)
0.254
(.010)
1.10
(.043)
MAX
0.22 – 0.38
(.009 – .015)
TYP
0.86
(.034)
REF
0.65
(.0256)
BSC
0s – 6s TYP
DETAIL “A”
DETAIL “A”
GAUGE PLANE
12
3
4
4.90 t 0.152
(.193 t .006)
8
8
1
BOTTOM VIEW OF
EXPOSED PAD OPTION
7
6
5
3.00 t 0.102
(.118 t .004)
(NOTE 3)
3.00 t 0.102
(.118 t .004)
(NOTE 4)
0.52
(.0205)
REF
1.68
(.066)
1.88
(.074)
5.23
(.206)
MIN
3.20 – 3.45
(.126 – .136)
1.68 t 0.102
(.066 t .004)
1.88 t 0.102
(.074 t .004)
0.889 t 0.127
(.035 t .005)
RECOMMENDED SOLDER PAD LAYOUT
0.65
(.0256)
BSC
0.42 t 0.038
(.0165 t .0015)
TYP
0.1016 t 0.0508
(.004 t .002)
DETAIL “B”
DETAIL “B”
CORNER TAIL IS PART OF
THE LEADFRAME FEATURE.
FOR REFERENCE ONLY
NO MEASUREMENT PURPOSE
0.05 REF
0.29
REF

LTC4444HMS8E-5#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Hi V Sync N-Ch MOSFET Drvr
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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