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LTC4444HMS8E-5#TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P14
LTC4444-5
4
44445fc
TYPICAL PERFORMANCE CHARACTERISTICS
V
CC
Supply Quiescent Current
vs Voltage
BOOST-TS Supply Quiescent
Current vs Voltage
V
CC
Supply Current
vs Temperature
Boost Supply Current
vs Temperature
Output Low Voltage (V
OL
)
vs Supply Voltage
Output High Voltage (V
OH
)
vs Supply Voltage
Input Thresholds (TINP, BINP)
vs Supply Voltage
Input Thresholds (TINP, BINP)
vs Temperature
Input Thresholds (TINP, BINP)
Hysteresis vs Voltage
V
CC
SUPPLY VOLTAGE (V)
0
0
QUIESCENT CURRENT (µA)
50
150
200
250
678910111213
450
44445 G01
100
12345 14
300
350
400
TINP = BINP = 0V
TINP (BINP) = 6V
T
A
= 25°C
BOOST = 6V
TS = GND
BOOST SUPPLY VOLTAGE (V)
0
0
QUIESCENT CURRENT (µA)
50
150
200
250
678910111213
400
44445 G02
100
12345 14
300
350
TINP = BINP = 0V
TINP = 6V, BINP = 0V
TINP = 0V, BINP = 6V
T
A
= 25°C
V
CC
= 6V
TS = GND
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
280
V
CC
SUPPLY CURRENT (µA)
285
295
300
305
325
44445 G03
290
310
315
320
V
CC
= BOOST = 6V
TS = GND
TINP = BINP = 0V
TINP (BINP) = 6V
TEMPERATURE (°C)
BOOST SUPPLY CURRENT (µA)
250
300
350
44445 G04
150
0
400
200
100
50
TINP = 6V, BINP = 0V
TINP = 0V, BINP = 6V
TINP = BINP = 0V
V
CC
= BOOST = 6V
TS = GND
–55 –25 5 35 65 95
125 150
SUPPLY VOLTAGE (V)
4.5
0
OUTPUT VOLTAGE (mV)
20
60
80
100
10.5 11.5 12.5 13.5
160
44445 G05
40
5.5 6.5 7.5 8.5 9.5
120
140
V
OL(TG)
V
OL(BG)
T
A
= 25°C
I
TG(BG)
= 100mA
BOOST = V
CC
TS = GND
SUPPLY VOLTAGE (V)
4.5
TG OR BG OUTPUT VOLTAGE (V)
9
11
13
15
12.5
44445 G06
7
5
8
10
12
14
6
4
3
6.5
8.5
10.5
5.5
7.5
9.5
11.5
13.5
T
A
= 25°C
BOOST = V
CC
TS = GND
–100mA
–1mA
–10mA
SUPPLY VOLTAGE (V)
1.8
TG OR BG INPUT THRESHOLD (V)
2.2
2.6
3.0
2.0
2.4
2.8
6.5 8.5 10.5 12.5
44445 G07
5.54.5 7.5 9.5 11.5 13.5
T
A
= 25°C
BOOST = V
CC
TS = GND
V
IH(TG,BG)
V
IL(TG,BG)
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
TG OR BG INPUT THRESHOLD (V)
2.6
2.8
3.0
44445 G08
2.4
2.2
2.5
2.7
2.9
2.3
2.1
2.0
V
CC
= BOOST = 6V
TS = GND
V
IH(TG,BG)
V
IL(TG,BG)
SUPPLY VOLTAGE (V)
4.5
TG OR BG INPUT THRESHOLD HYSTERESIS (mV)
500
475
450
425
400
375
350
325
300
12.5
44445 G09
6.5 8.5 10.5 11.55.5 7.5 9.5 13.5
T
A
= 25°C
BOOST = V
CC
TS = GND
LTC4444-5
5
44445fc
TYPICAL PERFORMANCE CHARACTERISTICS
Input Thresholds (TINP, BINP)
Hysteresis vs Temperature
V
CC
Undervoltage Lockout
Thresholds vs Temperature
Rise and Fall Time
vs V
CC
Supply Voltage
Rise and Fall Time
vs Load Capacitance
Peak Driver (TG, BG) Pull-Up
Current vs Temperature
Output Driver Pull-Down
Resistance vs Temperature
Propagation Delay
vs V
CC
Supply Voltage
Propagation Delay vs Temperature
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
TG OR BG INPUT THRESHOLD HYSTERESIS (mV)
450
475
500
44445 G10
425
400
375
V
CC
=
BOOST = 6V
TS = GND
TEMPERATURE (°C)
V
CC
SUPPLY VOLTAGE (V)
3.9
4.0
4.1
44445 G11
3.7
3.4
4.2
3.8
3.6
3.5
RISING THRESHOLD
FALLING THRESHOLD
BOOST = V
CC
TS = GND
–55 –25 5 35 65 95 125 150
SUPPLY VOLTAGE (V)
4.5
6
RISE/FALL TIME (ns)
10
14
18
34
26
6.5
8.5
9.5 13.5
30
22
8
12
16
32
24
28
20
5.5 7.5
10.5
11.5
12.5
44445 G12
T
A
= 25°C
BOOST = V
CC
TS = GND
C
L
= 3.3nF
t
r(TG)
t
f(TG)
t
f(BG)
t
r(BG)
LOAD CAPACITANCE (nF)
1
RISE/FALL TIME (ns)
40
50
60
9
44445 G13
30
20
0
3
5
7
210
4
6
8
10
80
70
T
A
= 25°C
V
CC
= BOOST = 6V
TS = GND
t
r(TG)
t
f(TG)
t
f(BG)
t
r(BG)
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
PULL-UP CURRENT (A)
2.5
3.0
3.5
44445 G14
2.0
1.5
1.0
I
PU(BG)
V
CC
= 6V
I
PU(TG)
BOOST–TS = 12V
I
PU(TG)
BOOST–TS = 6V
I
PU(BG)
V
CC
= 12V
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
OUTPUT DRIVER PULL-DOWN RESISTANCE ()
1.2
1.8
2.6
44445 G15
0.8
0.4
1.0
1.4
2.2
1.6
2.4
3.0
2.8
2.0
0.6
BOOST–TS = 6V
BOOST–TS = 12V
V
CC
= 6V
R
DS(TG)
R
DS(BG)
BOOST–TS = 4.5V
V
CC
= 4.5V
V
CC
= 12V
SUPPLY VOLTAGE (V)
4.5
PROPAGATION DELAY (ns)
45
40
35
30
25
20
15
10
12.5
44445 G16
6.5 8.5 10.5 11.55.5 7.5 9.5 13.5
T
A
= 25°C
BOOST = V
CC
TS = GND
t
PLH(TG)
t
PHL(TG)
t
PHL(BG)
t
PLH(BG)
–55 –25 5 35 65 95 125 150
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
32
42
52
44445 G17
22
12
27
37
47
17
7
2
t
PLH(TG)
t
PHL(BG)
V
CC
= BOOST = 6V
TS = GND
t
PHL(TG)
t
PLH(BG)
LTC4444-5
6
44445fc
PIN FUNCTIONS
TYPICAL PERFORMANCE CHARACTERISTICS
Switching Supply Current
vs Input Frequency
Switching Supply Current
vs Load Capacitance
TINP (Pin 1): High Side Input Signal. Input referenced
to GND. This input controls the high side driver output
(TG).
BINP (Pin 2): Low Side Input Signal. This input controls
the low side driver output (BG).
V
CC
(Pin 3): Supply. This pin powers input buffers, logic
and the low side gate driver output directly and the high
side gate driver output through an external diode con-
nected between this pin and BOOST (Pin 6). A low ESR
ceramic bypass capacitor should be tied between this pin
and GND (Pin 9).
BG (Pin 4): Low Side Gate Driver Output (Bottom Gate).
This pin swings between V
CC
and GND.
NC (Pin 5): No Connect. No connection required.
BOOST (Pin 6): High Side Bootstrapped Supply. An ex-
ternal capacitor should be tied between this pin and TS
(Pin 8). Normally, a bootstrap diode is connected between
V
CC
(Pin 3) and this pin. Voltage swing at this pin is from
V
CC
– V
D
to V
IN
+ V
CC
– V
D
, where V
D
is the forward volt-
age drop of the bootstrap diode.
TG (Pin 7): High Side Gate Driver Output (Top Gate). This
pin swings between TS and BOOST.
TS (Pin 8): High Side MOSFET Source Connection (Top
Source).
GND (Exposed Pad Pin 9): Ground. Must be soldered to
PCB ground for optimal thermal performance.
SWITCHING FREQUENCY (kHz)
0
0
SUPPLY CURRENT (mA)
0.2
0.6
0.8
1.0
400
800
1000
1.8
44445 G18
0.4
200 600
1.2
1.4
1.6
T
A
= 25°C
V
CC
= BOOST = 6V
TS = GND
I
BOOST
(TG SWITCHING)
I
VCC
(BG SWITCHING)
I
VCC
(TG SWITCHING)
I
BOOST
(BG SWITCHING)
LOAD CAPACITANCE (nF)
1
SUPPLY CURRENT (mA)
10
100
1000
1579
0
34 6 82 10
44445 G19
I
VCC
(BG SWITCHING
AT 500kHz)
I
BOOST
(BG SWITCHING AT 500kHz)
I
BOOST
(TG SWITCHING AT 1MHz)
I
BOOST
(TG SWITCHING
AT 1MHz)
I
VCC
(BG SWITCHING
AT 1MHz)
I
VCC
(TG SWITCHING
AT 1MHz)
I
VCC
(TG SWITCHING AT 500kHz)
P1-P3P4-P6P7-P9P10-P12P13-P14

LTC4444HMS8E-5#TRPBF

Mfr. #:
Buy LTC4444HMS8E-5#TRPBF
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Hi V Sync N-Ch MOSFET Drvr
Lifecycle:
New from this manufacturer.
Delivery:
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