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BAR74E6327HTSA1

P1-P3P4-P6
2007-04-19
1
BAL74/BAR74...
Silicon Switching Diode
• For high-speed switching applications
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAL74 BAR74
!
!
Type Package Configuration Marking
BAL74
BAR74
SOT23
SOT23
single
single
JCs
JBs
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
50 V
Peak reverse voltage V
RM
50
Forward current I
F
250 mA
Peak forward current I
FM
-
Surge forward current, t = 1 µs I
FS
4.5 A
Non-repetitive peak surge forward current I
FSM
-
Total power dissipation
T
S
≤ 54°C
P
tot
370 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
, BAL74, BAR74 R
thJS
≤ 260
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-19
2
BAL74/BAR74...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
50 - - V
Reverse current
V
R
= 50 V
V
R
= 50 V, T
A
= 150 °C
I
R
-
-
-
-
0.1
100
µA
Forward voltage
I
F
= 100 mA
V
F
- - 1 V
AC Characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
- - 2 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured at I
R
= 1mA,
R
L
= 100 Ω
t
rr
- - 4 ns
Test circuit for reverse recovery time
EHN00015
Oscillograph
Ι
F
D.U.T.
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50Ω
Oscillograph: R = 50Ω, t
r
= 0.35ns,
C ≤ 1pF
2007-04-19
3
BAL74/BAR74...
Reverse current I
R
= ƒ (T
A
)
V
R
= Parameter
BAR 74 EHB00012
10
1
2
10
5
Ι
R
3
10
5
10
4
5
10
nA
5
0 50 150
A
T
100
˚C
max.
V
R
= 70 V
70V
25V
typ.
Forward Voltage V
F
= ƒ (T
A
)
I
F
= Parameter
0
0.5
1.0
0 50 100 150
BAR 74 EHB00015
V
T
A
V
F
˚C
Ι
F
= 100 mA
10 mA
1 mA
0.1 mA
Forward current I
F
= ƒ (V
F
)
0
0
EHB00013BAR 74
Ι
0.5 1.0 V 1.5
50
100
mA
150
F
F
V
maxtyp
Peak forward current I
FM
= ƒ (t
p
)
10
EHB00014
Ι
FM
t
-2
-6
10
D = 0.005
0.01
0.02
T
D =
T
BAR 74
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
-1
10
0
10
1
10
2
10
A
t
p
t
p
0.05
0.1
0.2
P1-P3P4-P6

BAR74E6327HTSA1

Mfr. #:
Buy BAR74E6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching AF DIODES
Lifecycle:
New from this manufacturer.
Delivery:
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