Nexperia
PMPB12UNEA
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 7.9 AI
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 5 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 32 A
T
amb
= 25 °C [1] - 1.6 WP
tot
total power dissipation
T
sp
= 25 °C - 12.5 W
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 1.5 A
ESD maximum rating
V
ESD
electrostatic discharge
voltage
HBM [2] - 500 V
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
T
j(init)
= 25 °C; I
D
= 1.3 A; DUT in
avalanche (unclamped)
- 13.7 mJ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
[2] Measured between all pins.
PMPB12UNEA All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2018. All rights reserved
Product data sheet 26 March 2018 3 / 15
