BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
● Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
● 125 W at 25°C Case Temperature
● 15 A Continuous Collector Current
● Minimum h
FE
of 750 at 3 V, 6 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100 Ω,
V
BE(off)
= 0, R
S
= 0.1 Ω, V
CC
= 20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
V
CBO
45
60
80
100
120
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
V
CEO
45
60
80
100
120
V
Emitter-base voltage V
EBO
5 V
Continuous collector current I
C
15 A
Continuous base current I
B
0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
3.5 W
Unclamped inductive load energy (see Note 4) ½LI
C
2
100 mJ
Operating junction temperature range T
j
-65 to +150 °C
Operating temperature range T
stg
-65 to +150 °C
Operating free-air temperature range T
A
-65 to +150 °C