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74LVC04AD,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
74LVC04A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 17 November 2011 3 of 15
NXP Semiconductors
74LVC04A
Hex inverter
5.2 Pin description
6. Functional description
[1] H = HIGH voltage level; L = LOW voltage level
7. Limiting values
[1] The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2] The output voltage ratings may be exceeded if the output current ratings are observed.
[3] For SO14 packages: above 70 C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.
Table 2. Pin description
Symbol Pin Description
1A, 2A, 3A, 4A, 5A, 6A 1, 3, 5, 9, 11, 13 data input
1Y, 2Y, 3Y, 4Y, 5Y, 6Y 2, 4, 6, 8, 10, 12 data output
GND 7 ground (0 V)
V
CC
14 supply voltage
Table 3. Function table
[1]
Input nA Output nY
LH
HL
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +6.5 V
I
IK
input clamping current V
I
<0 50 - mA
V
I
input voltage
[1]
0.5 +6.5 V
I
OK
output clamping current V
O
>V
CC
or V
O
<0 - 50 mA
V
O
output voltage
[2]
0.5 V
CC
+0.5 V
I
O
output current V
O
=0V toV
CC
- 50 mA
I
CC
supply current - 100 mA
I
GND
ground current 100 - mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 C to +125 C
[3]
- 500 mW
74LVC04A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 17 November 2011 4 of 15
NXP Semiconductors
74LVC04A
Hex inverter
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.65 - 3.6 V
functional 1.2 - - V
V
I
input voltage 0 - 5.5 V
V
O
output voltage 0 - V
CC
V
T
amb
ambient temperature 40 - +125 C
t/V input transition rise and
fall rate
V
CC
=1.65V to2.7V 0 - 20 ns/V
V
CC
= 2.7 V to 3.6 V 0 - 10 ns/V
Table 6. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level
input voltage
V
CC
= 1.2 V 1.08 - - 1.08 - V
V
CC
= 1.65 V to 1.95 V 0.65 V
CC
- - 0.65 V
CC
-V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 1.2 V - - 0.12 - 0.12 V
V
CC
= 1.65 V to 1.95 V - - 0.35 V
CC
-0.35 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 V
V
OH
HIGH-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
=1.65Vto3.6V
V
CC
0.2 - - V
CC
0.3 - V
I
O
= 4mA; V
CC
= 1.65 V 1.2 - - 1.05 - V
I
O
= 8mA; V
CC
= 2.3 V 1.8 - - 1.65 - V
I
O
= 12 mA; V
CC
= 2.7 V 2.2 - - 2.05 - V
I
O
= 18 mA; V
CC
= 3.0 V 2.4 - - 2.25 - V
I
O
= 24 mA; V
CC
= 3.0 V 2.2 - - 2.0 - V
V
OL
LOW-level
output
voltage
V
I
=V
IH
or V
IL
I
O
= 100 A;
V
CC
= 1.65 V to 3.6 V
- - 0.2 - 0.3 V
I
O
=4mA; V
CC
= 1.65 V - - 0.45 - 0.65 V
I
O
=8mA; V
CC
= 2.3 V - - 0.6 - 0.8 V
I
O
=12mA; V
CC
= 2.7 V - - 0.4 - 0.6 V
I
O
=24mA; V
CC
= 3.0 V - - 0.55 - 0.8 V
I
I
input leakage
current
V
CC
= 3.6 V; V
I
=5.5VorGND - 0.1 5- 20 A
74LVC04A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 9 — 17 November 2011 5 of 15
NXP Semiconductors
74LVC04A
Hex inverter
[1] All typical values are measured at V
CC
= 3.3 V (unless stated otherwise) and T
amb
=25C.
10. Dynamic characteristics
[1] Typical values are measured at T
amb
=25C and V
CC
= 1.2 V, 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.
[4] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
N = number of inputs switching
(C
L
V
CC
2
f
o
) = sum of the outputs
11. Waveforms
I
CC
supply
current
V
CC
= 3.6 V; V
I
=V
CC
or GND;
I
O
=0A
-0.110-40A
I
CC
additional
supply
current
per input pin;
V
CC
= 2.7 V to 3.6 V;
V
I
=V
CC
0.6 V; I
O
=0A
- 5 500 - 5000 A
C
I
input
capacitance
V
CC
= 0 V to 3.6 V;
V
I
=GNDtoV
CC
-4.0---pF
Table 6. Static characteristics
…continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Table 7. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7
.
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
t
pd
propagation delay nA to nY; see Figure 6
[2]
V
CC
= 1.2 V - 14 - - - ns
V
CC
= 1.65 V to 1.95 V 0.3 3.7 8.8 0.3 10.2 ns
V
CC
= 2.3 V to 2.7 V 0.5 2.2 5.0 0.5 5.8 ns
V
CC
= 2.7 V 1.0 2.1 5.5 1.0 7.0 ns
V
CC
= 3.0 V to 3.6 V 1.0 2.0 4.5 1.0 6.0 ns
t
sk(o)
output skew time V
CC
= 3.0 V to 3.6 V
[3]
- - 1.0 - 1.5 ns
C
PD
power dissipation
capacitance
per buffer; V
I
=GNDtoV
CC
[4]
V
CC
= 1.65 V to 1.95 V - 3.9 - - - pF
V
CC
= 2.3 V to 2.7 V - 7.1 - - - pF
V
CC
= 3.0 V to 3.6 V - 9.9 - - - pF
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74LVC04AD,118

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Buy 74LVC04AD,118
Manufacturer:
Nexperia
Description:
Inverters 3.3V HEX INV
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