SN7002NH6327XTSA1

P1-P3 P4-P6 P7-P9

2011-07-11

Rev. 2.6 Page 1

SN7002N

SIPMOS



Small-Signal-Transistor

Product Summary

V

DS

60 V

R

DS(on)

5 Ω

I

D

0.2 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

PG-SOT-23

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

sSN

Type Package Pb-free Tape and Reel Information

SN7002N

PG-SOT-23

Yes

H6327: 3000 pcs/reel

SN7002N

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

0.2

0.16

A

Pulsed drain current

T

A

=25°C

I

D puls

0.8

Reverse diode dv/dt

I

S

=0.2A, V

DS

=48V, di/dt=200A/µs, T

jmax

=150°C

dv/dt

6 kV/µs

Gate source voltage V

GS

±20

V

ESD Class (JESD22-A114-HBM) 0 (<250V)

Power dissipation

T

A

=25°C

P

tot

0.36 W

Operating and storage temperature T

j

, T

stg

-55... +150

°C

IEC climatic category; DIN IEC 68-1 55/150/56

PG-SOT-23 H6433: 10000 pcs/reel sSN

Yes

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

2011-07-11

Rev. 2.6 Page 2

SN7002N

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - ambient

at minimal footprint

R

thJA

- - 350 K/W

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0, I

D

=250µA

V

(BR)DSS

60 - - V

Gate threshold voltage, V

GS

= V

DS

I

D

=26µA

V

GS(th)

0.8 1.4 1.8

Zero gate voltage drain current

V

DS

=60V, V

GS

=0, T

j

=25°C

V

DS

=60V, V

GS

=0, T

j

=150°C

I

DSS

-

-

-

-

0.1

5

µA

Gate-source leakage current

V

GS

=20V, V

DS

=0

I

GSS

- - 10 nA

Drain-source on-state resistance

V

GS

=4.5V, I

D

=0.17A

R

DS(on)

- 3.9 7.5

Ω

Drain-source on-state resistance

V

GS

=10V, I

D

=0.5A

R

DS(on)

- 2.5 5

2011-07-11

Rev. 2.6 Page 3

SN7002N

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

≥2*I

D

*R

DS(on)max

,

I

D

=0.16A

0.09 0.17 - S

Input capacitance C

iss

V

GS

=0, V

DS

=25V,

f=1MHz

- 34 45 pF

Output capacitance C

oss

- 7.2 9.6

Reverse transfer capacitance C

rss

- 2.8 4.2

Turn-on delay time t

d(on)

V

DD

=30V, V

GS

=10V,

I

D

=0.5A, R

G

=6Ω

- 2.4 3.6 ns

Rise time t

r

- 3.2 4.8

Turn-off delay time t

d(off)

- 5.3 8

Fall time t

f

- 3.6 5.4

Gate Charge Characteristics

Gate to source charge Q

gs

V

DD

=48V, I

D

=0.5A - 0.14 0.21 nC

Gate to drain charge Q

gd

- 0.42 0.63

Gate charge total Q

g

V

DD

=48V, I

D

=0.5A,

V

GS

=0 to 10V

- 1 1.5

Gate plateau voltage V

(plateau)

V

DD

=48V, I

D

= 0.5 A - 4.5 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

A

=25°C - - 0.2 A

Inv. diode direct current, pulsedI

SM

- - 0.8

Inverse diode forward voltage V

SD

V

GS

=0, I

F

= I

S

- 0.83 1.2 V

Reverse recovery time t

rr

V

R

=30V, I

F

=l

S

,

di

F

/dt=100A/µs

- 14.2 21.3 ns

Reverse recovery charge Q

rr

- 5.9 8.8 nC

P1-P3 P4-P6 P7-P9

SN7002NH6327XTSA1

Mfr. #:

Buy SN7002NH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 60V 200mA SOT-23-3

Lifecycle:

New from this manufacturer.

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