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SQD40P10-40L_GE3

P1-P3P4-P6P7-P9P10-P10
SQD40P10-40L
www.vishay.com
Vishay Siliconix
S11-1559-Rev. B 22-Aug-11
1
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V)
- 100
R
DS(on)
() at V
GS
= - 10 V
0.040
R
DS(on)
() at V
GS
= - 4.5 V
0.048
I
D
(A)
- 38
Configuration Single
S
G
D
P-Channel MOSFET
TO-252
SGD
Top View
Drain Connected to Tab
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD40P10-40L-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
- 100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
- 38
A
T
C
= 125 °C
- 22
Continuous Source Current (Diode Conduction)
a
I
S
- 50
Pulsed Drain Current
b
I
DM
- 150
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 44
Single Pulse Avalanche Energy
E
AS
96 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
136
W
T
C
= 125 °C
45
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient
PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain)
R
thJC
1.1
SQD40P10-40L
www.vishay.com
Vishay Siliconix
S11-1559-Rev. B 22-Aug-11
2
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 μA
- 100 - -
V
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA
- 1.0 - 2.0 - 2.5
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
- - ± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V V
DS
= - 100 V
--- 1
μA
V
GS
= 0 V V
DS
= - 100 V, T
J
= 125 °C
--- 50
V
GS
= 0 V V
DS
= - 100 V, T
J
= 175 °C
- - - 250
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
- 5 V
- 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 9.2 A
- 0.033 0.040
V
GS
= - 10 V I
D
= - 9.2 A, T
J
= 125 °C
- - 0.074
V
GS
= - 10 V I
D
= - 9.2 A, T
J
= 175 °C
- - 0.093
V
GS
= - 4.5 V I
D
= - 7.7 A
- 0.037 0.048
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 9.2 A
-35-S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V V
DS
= - 25 V, f = 1 MHz
- 4433 5545
pF Output Capacitance
C
oss
- 301 380
Reverse Transfer Capacitance
C
rss
- 208 260
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 50V, I
D
= - 9.2 A
- 96 144
nC
Gate-Source Charge
c
Q
gs
-8.4-
Gate-Drain Charge
c
Q
gd
- 23.5 -
Gate Resistance
R
g
f = 1 MHz 1.5 3.13 4.7
Turn-On Delay Time
c
t
d(on)
V
DD
= - 50 V, R
L
= 6.49
I
D
- 7.7 A, V
GEN
= - 10 V, R
g
= 1.0
-1117
ns
Rise Time
c
t
r
-1117
Turn-Off Delay Time
c
t
d(off)
- 78 117
Fall Time
c
t
f
-1523
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - - 150 A
Forward Voltage
V
SD
I
F
= - 7.7 A, V
GS
= 0 V
-- 0.8- 1.5V
SQD40P10-40L
www.vishay.com
Vishay Siliconix
S11-1559-Rev. B 22-Aug-11
3
Document Number: 67022
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
8
16
24
32
40
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
2
4
6
8
10
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 8 16 24 32 40
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
8
16
24
32
40
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
C
0
1000
2000
3000
4000
5000
6000
7000
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P9P10-P10

SQD40P10-40L_GE3

Mfr. #:
Buy SQD40P10-40L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -100V -30A 136W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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