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IXGH16N170AH1

P1-P3P4-P6P7-P7
© 2014 IXYS CORPORATION, All Rights Reserved
Fig. 25. Recovery Energy E
rec
vs -di
F
/dt
1.0
1.5
2.0
2.5
3.0
3.5
4.0
200 300 400 500 600 700
-di
F
/dt [A/µs]
E
rec
[mJ]
T
VJ
= 125ºC
V
R
= 900V
I
F
= 20A
10A
5A
IXGH/T16N170A
IXGH/T16N170AH1
IXYS REF: G_16N170A(4N) 04-10-14 / DH10A-1800PA
Fig. 28. Maximum Transient Thermal Impedance
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 26. Maximum Transient Thermal Impedance (Diode)
aaa
3
Fig. 21. Forward Current I
F
vs V
F
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
V
F
[V]
I
F
[A]
125ºC
T
VJ
= 25ºC
Fig. 22. Reverse Recovery Charge Q
rr
vs. -di
F
/dt
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
200 300 400 500 600 700
-di
F
/dt [A/µs]
Q
rr
[µC]
T
VJ
= 125ºC
V
R
= 900V
I
F
= 20A
5A
10A
Fig. 23. Peak Reverse Current I
RM
vs. -di
F
/dt
12
14
16
18
20
22
24
26
28
200 300 400 500 600 700
-di
F
/dt [A/µs]
I
RM
[A]
T
VJ
= 125ºC
V
R
= 900V
I
F
= 20A
5A
10A
Fig. 24. Recovery Time t
rr
vs. -di
F
/dt
200
250
300
350
400
450
500
550
600
650
700
200 300 400 500 600 700
-di
F
/dt [A/µs]
t
rr
[ns]
T
VJ
= 125ºC
V
R
= 900V
I
F
= 20A
5A
10A
P1-P3P4-P6P7-P7

IXGH16N170AH1

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IGBT Transistors 11 Amps 1700V 5 Rds
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