BUK7Y10-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 9 April 2010 7 of 14
NXP Semiconductors
BUK7Y10-30B
N-channel TrenchMOS standard level FET
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 9. Forward transconductance as a function of
drain current; typical values.
0
14
28
42
56
70
012345
V
DS
(V)
I
D
(A)
6.2V
5.9V
10V
5.5V
5.1V
4.7V
20V
V
GS
(V) =
003aad623
0
25
50
75
100
0 204060
I
D
(A)
R
DSon
(m
Ω
)
10V
5.1V 5.9V4.7V 5.5V
6.2V
20V
V
GS
(V) =
003aad624
0
20
40
60
02468
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
003aad629
0
5
10
15
20
0 15304560
I
D
(A)
g
fs
(S)