NXP Semiconductors
PMPB85ENEA
60 V, single N-channel Trench MOSFET
PMPB85ENEA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 19 December 2013 3 / 15
Symbol Parameter Conditions Min Max Unit
E
DS(AL)S
non-repetitive drain-source
avalanche energy
T
j(init)
= 25 °C; I
D
= 0.4 A; DUT in
avalanche (unclamped)
- 12.6 mJ
T
amb
= 25 °C [1] - 1.6 W
T
amb
= 25 °C; t ≤ 5 s [1] - 3.3 W
P
tot
total power dissipation
T
sp
= 25 °C - 15.6 W
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 1 A
ESD maximum rating
V
ESD
electrostatic discharge voltage HBM [2] - 2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
[2] Measured between all pins.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of junction temperature
