PMPB85ENEAX Datasheet PMPB85ENEAX, PMPB85ENEA/FX | P7-P9

NXP Semiconductors

PMPB85ENEA

60 V, single N-channel Trench MOSFET

Product data sheet 19 December 2013 6 / 15

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

= 250 µA; V

GS

= 0 V; T

j

= 25 °C 60 - - V

V

GSth

gate-source threshold

voltage

I

D

= 250 µA; V

DS

= V

GS

; T

j

= 25 °C 1.3 1.7 2.7 V

V

DS

= 60 V; V

GS

= 0 V; T

j

= 25 °C - - 1 µAI

DSS

drain leakage current

V

DS

= 60 V; V

GS

= 0 V; T

j

= 150 °C - - 10 µA

V

GS

= 20 V; V

DS

= 0 V; T

j

= 25 °C - - 10 µA

V

GS

= -20 V; V

DS

= 0 V; T

j

= 25 °C - - -10 µA

V

GS

= 10 V; V

DS

= 0 V; T

j

= 25 °C - - 1 µA

I

GSS

gate leakage current

V

GS

= -10 V; V

DS

= 0 V; T

j

= 25 °C - - -1 µA

V

GS

= 10 V; I

D

= 3 A; T

j

= 25 °C - 72 95 mΩ

V

GS

= 10 V; I

D

= 3 A; T

j

= 150 °C - 135 175 mΩ

R

DSon

drain-source on-state

resistance

V

GS

= 4.5 V; I

D

= 2.8 A; T

j

= 25 °C - 85 120 mΩ

g

fs

forward

transconductance

V

DS

= 10 V; I

D

= 3 A; T

j

= 25 °C - 11.5 - S

R

G

gate resistance f = 1 MHz; T

j

= 25 °C - 1.7 - Ω

Dynamic characteristics

Q

G(tot)

total gate charge - 6.2 9.2 nC

Q

GS

gate-source charge - 0.8 - nC

Q

GD

gate-drain charge

V

DS

= 30 V; I

D

= 3 A; V

GS

= 10 V;

T

j

= 25 °C

- 1.2 - nC

C

iss

input capacitance - 305 - pF

C

oss

output capacitance - 40 - pF

C

rss

reverse transfer

capacitance

V

DS

= 30 V; f = 1 MHz; V

GS

= 0 V;

T

j

= 25 °C

- 25 - pF

t

d(on)

turn-on delay time - 4 - ns

t

r

rise time - 3.5 - ns

t

d(off)

turn-off delay time - 10.5 - ns

t

f

fall time

V

DS

= 30 V; I

D

= 3 A; V

GS

= 10 V;

R

G(ext)

= 6 Ω; T

j

= 25 °C

- 4.5 - ns

Source-drain diode

V

SD

source-drain voltage I

S

= 1 A; V

GS

= 0 V; T

j

= 25 °C - 0.8 1.2 V

NXP Semiconductors

PMPB85ENEA

60 V, single N-channel Trench MOSFET

Product data sheet 19 December 2013 7 / 15

V

DS

(V)

0 542 31

aaa-008601

4

8

12

I

D

(A)

0

V

G

S

=

2

.

5

V

2

.

8

V

3

.

0

V

3

.

2

V

3

.

6

V

4

.

5

V

10

V

T

j

= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

10

-4

10

-5

10

-3

I

P

(A)

10

-6

aaa-008602

V

GS

(V)

0 321

min t

y

p

max

T

j

= 25 °C; V

DS

= 10 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

aaa-008603

I

D

(A)

0 1284

160

240

80

320

400

R

DSon

(mΩ)

0

2

.

8

V

3

.

0

V

3

.

2

V

3

.

6

V

4

.

5

V

10

V

G

S

=

2

.

5

V

T

j

= 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

V

GS

(V)

0 862 4

aaa-008604

200

100

300

400

R

DSon

(mΩ)

0

T

j

=

2

5

°

C

T

j

=

1

5

0

°

C

I

D

= 2.8 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NXP Semiconductors

PMPB85ENEA

60 V, single N-channel Trench MOSFET

Product data sheet 19 December 2013 8 / 15

V

GS

(V)

0 431 2

aaa-008605

4

8

12

I

D

(A)

0

T

j

=

1

5

0

°

C

T

j

=

2

5

°

C

V

DS

> I

D

× R

DSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

T

j

(°C)

-60 1801200 60

aaa-008606

1.1

1.6

2.1

a

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

T

j

(°C)

-60 1801200 60

aaa-008607

1

2

3

V

GS(th)

(V)

0

m

i

n

t

y

p

m

a

x

I

D

= 0.25 mA; V

DS

= V

GS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

V

DS

(V)

10

-1

10

2

101

aaa-008608

10

2

10

3

C

(pF)

1

C

iss

C

oss

C

rss

f = 1 MHz; V

GS

= 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMPB85ENEAX

PMPB85ENEAX

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