OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PT5529B/L2-F

P1-P3P4-P6P7-P7
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-10-22 17:03:14.0
1
Copyright © 2010, Everlight All Rights Reserved. Release Date :Oct.7.2015. Issue No: DPT-0000156 _Rev.2
www.everlight.com
Side Face Silicon Phototransistor
PT5529B/L2-F
F
eatures
․Fast response time
․High photo sensitivity
․Pb free
․This product itself will remain within RoHS compliant version.
De
scription
․PT5529B/L2-F is a high speed and high sensitive dual
phototransistor molded in a black plastic package with plat side
view.
․The device is spectrally matched with IR emitters.
Applications
․Mouse
․Optoelectronic Switch
․Photo Interrupter
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-10-22 17:03:14.0
DATASHEET
Side Face Silicon Phototransistor
PT5529B/L2-F
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : Oct.7.2015. Issue No: DPT-0000156 _Rev2
www.everlight.com
Device Selection Guide
Chip
Materials
Lens Color
Si Black
Absolute Maximum Ratings (Ta=25
℃)
Parameter Symbol Rating Unit
Collector-Emitter Voltage V
CEO
30 V
Emitter-Collector-Voltage V
ECO
5 V
Collector Current I
C
20 mA
Operating Temperature Topr
-25 ~ +85
℃
℃
Storage Temperature Tstg
-40 ~ +85
℃
℃
Lead Soldering Temperature(*1) Tsol 260
℃
Power Dissipation at (or below)
25
℃ Free Air Temperature
P
D
75 mW
Notes: *1:Soldering time
≦
5 seconds.
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2015-10-22 17:03:14.0
DATASHEET
Side Face Silicon Phototransistor
PT5529B/L2-F
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : Oct.7.2015. Issue No: DPT-0000156 _Rev2
www.everlight.com
-Optical Characteristics (Ta=25℃)
Parameter Symbol Condition Min Typ Max Unit
Collector – Emitter
Breakdown Voltage
BV
CEO
I
C
=100μA
Ee=0mW/cm
2
30
--- --- V
Emitter-Collector
Breakdown Voltage
BV
ECO
I
E
=100μA
Ee=0mW/cm
2
5
--- --- V
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
=2mA
Ee=1mW/cm
2
--- ---
0.4
V
Rise Time
t
r
V
CE
=5V
I
C
=1mA
R
L
=1000Ω
--- 15 ---
μS
Fall Time
t
f
--- 15 ---
Collector Dark Current
I
CEO
Ee=0mW/cm
2
V
CE
=20V
--- --- 100 nA
On State Collector Current
I
C(on)
V
CE
=5V,
Ee=0.555mW/cm
2
129 --- 1085 μA
Wavelength of
Peak Sensitivity
λp --- --- 940 --- nm
Rang of Spectral Bandwidth
λ
0.5
--- 760 --- 1100 nm
P1-P3P4-P6P7-P7

PT5529B/L2-F

Mfr. #:
Buy PT5529B/L2-F
Manufacturer:
Description:
Optical Sensors Phototransistors IR Phototransisto
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet