2003 Mar 25 3
NXP Semiconductors Product data sheet
Low-leakage double diode BAV170
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
RRM
repetitive peak reverse voltage − 85 V
V
R
continuous reverse voltage − 75 V
I
F
continuous forward current single diode loaded; note 1;
see Fig.2
− 215 mA
double diode loaded; note 1;
see Fig.2
− 125 mA
I
FRM
repetitive peak forward current − 500 mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25 °C prior to
surge; see
Fig.4
t
p
= 1 µs − 4 A
t
p
= 1 ms − 1 A
t
p
= 1 s − 0.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage see Fig.3
I
F
= 1 mA − 900 mV
I
F
= 10 mA − 1 000 mV
I
F
= 50 mA − 1 100 mV
I
F
= 150 mA − 1 250 mV
I
R
reverse current see Fig.5
V
R
= 75 V 0.003 5 nA
V
R
= 75 V; T
j
= 150 °C 3 80 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 2 − pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω; measured at
I
R
= 1 mA; see Fig.7
0.8 3 µs
