ZTX458

NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2  MARCH 1994
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
300 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=320V
Collector Cut-Off
Current
I
CES
100 nA VCE=320V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=50mA, I
B
=5mA
Base-Emitter
Turn On Voltage
V
BE(on)
0.9 V IC=50mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
Transition Frequency f
T
50 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5pFV
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-182
ZTX458
C
B
E
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
T
amb
=25°C
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
- (V
olts)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-
No
r
mal
ised
Ga
i
n
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
VCE - Collector Voltage (Volts)
Safe Operating Area
100110
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
0.001
1000
ZTX458
3-183
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2  MARCH 1994
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5V
Continuous Collector Current I
C
300 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
400 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=320V
Collector Cut-Off
Current
I
CES
100 nA VCE=320V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.5
V
V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=50mA, I
B
=5mA
Base-Emitter
Turn On Voltage
V
BE(on)
0.9 V IC=50mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
Transition Frequency f
T
50 MHz I
C
=10mA, V
CE
=20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5pFV
CB
=20V, f=1MHz
E-Line
TO92 Compatible
3-182
ZTX458
C
B
E
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
CE
(
sa
t
)
- (V
olts)
T
amb
=25°C
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
- (V
olts)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
F
E
-
No
r
mal
ised
Ga
i
n
V
BE
(
sa
t
)
- (V
olts)
V
BE
- (V
olts)
I
C
-
Co
l
le
c
to
r
Cur
r
e
nt
(
Am
ps)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
VCE - Collector Voltage (Volts)
Safe Operating Area
100110
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
0.001
1000
ZTX458
3-183

ZTX458

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN High Voltage
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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