STB16NS25T4 Datasheet STB16NS25T4 | P4-P6

Obsolete Product(s) - Obsolete Product(s)

STB16NS25

4/9

Transconductance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Static Drain-source On Resistance

Transfer CharacteristicsOutput Characteristics

Obsolete Product(s) - Obsolete Product(s)

5/9

STB16NS25

Normalized BVDSS vs Temperature

Source-drain Diode Forward Characteristics

Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.

Obsolete Product(s) - Obsolete Product(s)

STB16NS25

6/9

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

MOSFET N-CH 250V 16A D2PAK

Lifecycle:

New from this manufacturer.

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