BZA962AVL,115

2003 Oct 20 3
NXP Semiconductors Product data sheet
Quadruple low capacitance ESD
suppressor
BZA900AVL series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. DC working current limited by P
tot(max)
.
2. Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
I
Z
working current T
amb
= 25 °C note 1 mA
I
F
continuous forward current T
amb
= 25 °C 200 mA
I
FSM
non-repetitive peak forward current t
p
= 1 ms; square pulse 3.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 2; see Fig.5 335 mW
P
ZSM
non repetitive peak reverse power
dissipation
square pulse; t
p
= 1 ms 6 W
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 kV
HBM MIL-Std 883 10 kV
STANDARD CONDITIONS
IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact discharge)
HBM MIL-Std 883, class 3 >4 kV
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
all diodes loaded 370 K/W
R
th j-s
thermal resistance from junction to
solder point; note
1
one diode loaded 135 K/W
all diodes loaded 125 K/W
2003 Oct 20 4
NXP Semiconductors Product data sheet
Quadruple low capacitance ESD
suppressor
BZA900AVL series
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
forward voltage I
F
= 200 mA 1.2 V
I
R
reverse current
BZA956AVL V
R
= 3 V 200 nA
BZA962AVL V
R
= 4 V 100 nA
BZA968AVL V
R
= 4.3 V 20 nA
V
Z
working voltage I
Z
= 1 mA
BZA956AVL 5.32 5.6 5.88 V
BZA962AVL 5.89 6.2 6.51 V
BZA968AVL 6.46 6.8 7.14 V
r
dif
differential resistance I
Z
= 1 mA
BZA956AVL 200
BZA962AVL 150
BZA968AVL 100
S
Z
temperature coefficient I
Z
= 1 mA
BZA956AVL 1.3 mV/K
BZA962AVL 2.4 mV/K
BZA968AVL 2.9 mV/K
C
d
diode capacitance f = 1 MHz; V
R
= 0
BZA956AVL 22 28 pF
BZA962AVL 18 22 pF
BZA968AVL 16 19 pF
diode capacitance f = 1 MHz; V
R
= 5 V
BZA956AVL 12 17 pF
BZA962AVL 9 12 pF
BZA968AVL 8 11 pF
I
ZSM
non-repetitive peak reverse current t
p
= 1 ms; T
amb
= 25 °C
BZA956AVL 0.90 A
BZA962AVL 0.85 A
BZA968AVL 0.80 A
2003 Oct 20 5
NXP Semiconductors Product data sheet
Quadruple low capacitance ESD
suppressor
BZA900AVL series
handbook, halfpage
10
1
10
1
MLE001
10
2
10
1
1
t
p
(ms)
I
ZSM
(A)
10
BZA956AVL
BZA962AVL/BZA968AVL
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
handbook, halfpage
10
1
10
2
MLE003
10
2
10
1
1
t
p
(ms)
P
ZSM
(W)
10
BZA962AVL
BZA956AVL
BZA968AVL
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
05
26
6
10
14
18
22
1234
V
R
(V)
C
d
(pF)
MLE002
BZA962AVL
BZA968AVL
BZA956AVL
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
T
j
= 25 °C; f = 1 MHz.
handbook, halfpage
0 50 100 150
400
300
100
0
200
MGT586
T
amb
(
°
C)
P
tot
(mW)
Fig.5 Power derating curve.

BZA962AVL,115

Mfr. #:
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors DIODE ARRAY TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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