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SS2P4-M3/84A

P1-P3P4-P4
SS2P2, SS2P3, SS2P4
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-13
1
Document Number: 88910
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1 per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
20 V, 30 V, 40 V
I
FSM
50 A
E
AS
11.25 mJ
V
F
0.50 V
T
J
max. 150 °C
Package DO-220AA (SMP)
Diode variations Single
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS2P2 SS2P3 SS2P4 UNIT
Device marking code 22 23 24
Maximum repetitive peak reverse voltage V
RRM
20 30 40 V
Maximum average forward rectified current (fig. 1) I
F(AV)
2.0 A
Peak forward surge current 10 ms single
half sine-wave superimposed on rated load
I
FSM
50 A
Non-repetitive avalanche energy at I
AS
= 1.5 A, L = 10 mH, T
J
= 25 °C E
AS
11.25 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
SS2P2, SS2P3, SS2P4
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-13
2
Document Number: 88910
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R
JL
is measured
at the terminal of cathode band. R
JC
is measured at the top center of the body
Note
(1)
Automotive grade
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage
I
F
= 2 A T
J
= 25 °C
V
F
(1)
0.50 0.55
V
I
F
= 2 A T
J
= 125 °C 0.43 0.50
Maximum reverse current at rated V
R
voltage
T
J
= 25 °C
I
R
(2)
- 150 μA
T
J
= 125 °C 8 15 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
110 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS2P2 SS2P3 SS2P4 UNIT
Typical thermal resistance
R
JA
(1)
115
°C/WR
JL
(1)
15
R
JC
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS2P4-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel
SS2P4-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel
SS2P4HM3/84A
(1)
0.024 84A 3000 7" diameter plastic tape and reel
SS2P4HM3/85A
(1)
0.024 85A 10 000 13" diameter plastic tape and reel
0
2.4
80 90 100 110 120 130 140 150
1.6
2.0
0.4
0.8
1.2
Average Forward Rectified Current (A)
Lead Temperature (°C)
T
L
Measured
at the Cathode Band Terminal
1
10
100
10
20
30
0
40
50
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
SS2P2, SS2P3, SS2P4
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-13
3
Document Number: 88910
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1 0.3 0.5 0.7 0.9 1.1 1.3
0.1
10
1
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
20 40 60 80 100
0.1
1
10
100
1000
10 30 50 70 90
100 000
10 000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
0.1 101 100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 101 100
1
10
100
0.1
1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-220AA (SMP)
Cathode Band
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
0.053 (1.35)
0.041 (1.05)
0.012 (0.30) REF.
0.100
(2.54)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.050
(1.27)
P1-P3P4-P4

SS2P4-M3/84A

Mfr. #:
Buy SS2P4-M3/84A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 2.0 Amp 40 Volt 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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