BC857B

BC857B

SMALL SIGNAL PNP TRANSISTOR

PRELIMINARY DATA

■ SILICON EPITAXIAL PLANAR PNP

TRANSISTOR

■ MINIATURE SOT-23 PLASTIC PACKAGE

FOR SURFACE MOUNTING CIRCUITS

■ TAPE AND REEL PACKING

■ THE NPN COMPLEMENTARY TYPE IS

BC847B

APPLICATIONS

■ WELL SUITABLE FOR PORTABLE

EQUIPMENT

■ SMALL LOAD SWITCH TRANSISTOR WITH

HIGH GAIN AND LOW SATURATION

VOLTAGE

®

INTERNAL SCHEMATIC DIAGRAM

June 2002

SOT-23

Type Marking

BC857B 3F

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage (I

E

= 0) -50 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) -45 V

V

EBO

Emitter-Base Voltage (I

C

= 0) -5 V

I

C

Collector Current -100 mA

I

CM

Collector Peak Current -200 mA

P

tot

Total Dissipation at T

C

= 25

o

C 250 mW

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

1/4

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

THERMAL DATA

R

thj-amb

• Thermal Resistance Junction-Ambient Max 500

o

C/W

• Device mounted on a PCB area of 1 cm

2

.

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

Collector Cut-off

Current (I

E

= 0)

V

CB

= -30 V

V

CB

= -30 V T

C

= 150

o

C

-1 -15

-5

nA

µA

I

EBO

Emitter Cut-off Current

(I

C

= 0)

V

EB

= -5 V -100 nA

V

(BR)CBO

Collector-Base

Breakdown Voltage

(I

E

= 0)

I

C

= -10 µA

-50 V

V

(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(I

B

= 0)

I

C

= -2 mA -45 V

V

(BR)EBO

Emitter-Base

Breakdown Voltage

(I

C

= 0)

I

E

= -10 µA

-5 V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= -10 mA I

B

= -0.5 mA

I

C

= -100 mA I

B

= -5 mA

-0.07

-0.25

-0.3

-0.65

V

V

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= -10 mA I

B

= -0.5 mA

I

C

= -100 mA I

B

= -5 mA

-0.7

-0.85

V

V

V

BE(on)

∗ Base-Emitter On

Voltage

I

C

= -2 mA V

CE

= -5 V

I

C

= -10 mA V

CE

= -5 V

-0.6 -0.65 -0.75

-0.82

V

V

h

FE

DC Current Gain I

C

= -2 mA V

CE

= -5 V 220 475

f

T

Transition Frequency I

C

= -10 mA V

CE

= -5 V f = 100MHz 100 MHz

C

CBO

Collector-Base

Capacitance

I

E

= 0 V

CB

= -10 V f = 1 MHz 4.5 pF

NF Noise Figure V

CE

= -5 V I

C

= -0.2 mA f = 1KHz

∆f = 200 Hz R

G

= 2 KΩ

210dB

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

BC857B

2/4

Obsolete Product(s) - Obsolete Product(s)

DIM.

mm mils

MIN. TYP. MAX. MIN. TYP. MAX.

A 0.85 1.1 33.4 43.3

B 0.65 0.95 25.6 37.4

C 1.20 1.4 47.2 55.1

D 2.80 3 110.2 118

E 0.95 1.05 37.4 41.3

F 1.9 2.05 74.8 80.7

G2.1 2.582.6 98.4

H 0.38 0.48 14.9 18.8

L0.3 0.611.8 23.6

M 0 0.1 0 3.9

N 0.3 0.65 11.8 25.6

O 0.09 0.17 3.5 6.7

0044616/B

SOT-23 MECHANICAL DATA

BC857B

3/4

BC857B

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT TRANSISTOR 200mW

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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BC857B