ESDA14V2-1BF3

June 2009 Doc ID 15894 Rev 1 1/9
9
ESDA14V2-1BF3
Single-line bidirectional Transil™ array for ESD protection
Features
ESD Protection: IEC61000-4-2 level 4
Low leakage current
Very small PCB area < 0.4 mm²
400 micron pitch
Complies with the following standards
IEC61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
Applications
Where transient overvoltage protection of ESD
sensitive equipment is required, such as:
Computers
Printers
Communications systems and cellular phones
Video equipment
Description
The ESDA14V2-1BF3 is a monolithic bidirectional
diode designed to protect 1 line against ESD
transients.
The device is ideally suited for applications where
both reduced line capacitance and board space
saving are required.
Figure 1. Schematic diagram (top view)
TM: Transil is a trademark of STMicroelectronics
Flip Chip
(2 bumps)
www.st.com
Characteristics ESDA14V2-1BF3
2/9 Doc ID 15894 Rev 1
1 Characteristics
Figure 2. Electrical characteristics (definitions)
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
V
PP
Peak pulse voltage:
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
±15
±8
kV
P
PP
Peak pulse power dissipation (8/20 µs)
(1)
T
j initial
= T
amb
50 W
T
j
Junction temperature 125 °C
T
stg
Storage temperature range - 55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
T
op
Operating junction temperature range -40 to +125 °C
1. For a surge greater than the maximum values, the diode will fail in short-circuit
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current @ V
RM
R
D
Dynamic resistance
T Voltage - temperature coefficient
C
line
Line capacitance
α
Table 2. Electrical characteristics (values, T
amb
= 25 °C)
Symbol Test condition Min. Typ. Max Unit
V
BR
I
R
= 1 mA 14.2 - 18.0 V
I
RM
V
RM
= 12 V --0.5
µA
V
RM
= 3 V --0.1
R
d
Square pulse, I
PP
= 3 A t
p
= 2.5 µs - 2.2 - Ω
αT ΔV
BR
= αT(T
amb
- 25 °C) x V
BR
(25 °C) - - 6.5 10
-4
/°C
C
line
V
R
= 0 V, F = 1 MHz, V
osc
= 30 mV - 10 - pF
ESDA14V2-1BF3 Characteristics
Doc ID 15894 Rev 1 3/9
Figure 3. Relative variation of peak pulse
power versus initial junction
temperature
Figure 4. Peak pulse power versus
exponential pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 25 50 75 100 125 150
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
T
j
(°C)
1
10
100
1000
1 10 100 1000
P
PP
(W)
T
j
initial = 25 °C
t
P
(µs)
Figure 5. Clamping voltage versus peak
pulse current (square pulse,
typical values)
Figure 6. Junction capacitance versus
reverse applied voltage
(typical values)
0.1
1.0
10.0
15 16 17 18 19 20 21 22 23 24 25
I
PP
(A)
Square wave 2.5µs - T=25°C
V
CL
(V)
0
1
2
3
4
5
6
7
8
9
10
11
12
012345678910
C(pF)
F=1 MHz
V
OSC
=30mV
RMS
T
J
=25°C
Voltage(V)
Figure 7. Relative variation of leakage
current versus junction
temperature (typical values)
Figure 8. S21 attenuation measurements
1
10
100
1000
25 50 75 100 125
I
R
[T
j
]/I
R
[T
j
=25°C]
V
R
=12V
T
j
(°C)
100.0k 1.0M 10.0M 100.0M 1.0G
-30.00
-24.00
-18.00
-12.00
-6.00
0.00
Attenuation
dB
F (Hz)
< -5.6dB
(-5.8dB@900MHz
-10.7dB@1.8GHz)
Attenuation
(0.8 – 4GHz)
505 MHz
-3 dB point
0.01 dB
Pass band
attenuation
Average
Performance
(50WSystem)
< -5.6dB
(-5.8dB@900MHz
-10.7dB@1.8GHz)
Attenuation
(0.8 – 4GHz)
505 MHz
-3 dB point
0.01 dB
Pass band
attenuation
Average
Performance
(50 Ω System)

ESDA14V2-1BF3

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors Single Line Bi-Di ESD Transil Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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