NCV887200
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4
ELECTRICAL CHARACTERISTICS (40°C < T
J
< 150°C, 4.8 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
Symbol Conditions Min Typ Max Unit
GENERAL
Quiescent Current, Sleep Mode
I
q,sleep
V
IN
= 13.2 V, EN = 0, T
J
= 25°C 2.0
mA
Quiescent Current, Sleep Mode I
q,sleep
V
IN
= 13.2 V, EN = 0, 40°C < T
J
< 125°C 2.0 6.0
mA
Quiescent Current, No switching I
q,off
Into VIN pin, EN = 1, No switching 1.5 2.5 mA
Quiescent Current, Switching,
Normal Operation
I
q,on
Into VIN pin, EN = 1, Switching 3.0 6.0 mA
OSCILLATOR
Minimum Pulse Width
t
on,min
90 115 140 ns
Maximum Duty Cycle D
max
91 92 93.5 %
Switching Frequency f
s
608 675 742 kHz
SoftStart Time t
ss
From start of switching with V
FB
= 0 until ref-
erence voltage = V
REF
1.55 1.90 2.25 ms
SoftStart Delay t
ss,dly
From EN 1 until start of switching with
V
FB
= 0 with V
C
pin compensation network
disconnected
200 280
ms
Slope Compensating Ramp S
a
30 34 38
mV/ms
ENABLE/SYNCHRONIZATION
EN/SYNC PullDown Current
I
EN/SYNC
V
EN/SYNC
= 5 V 5.0 10
mA
EN/SYNC Input High Voltage V
s,ih
2.0 5.0 V
EN/SYNC Input Low Voltage V
s,il
0 800 mV
EN/SYNC TimeOut Ratio %t
en
From SYNC falling edge, to oscillator control
(EN high) or shutdown (EN low), Percent of
typical switching period
350 %
SYNC Minimum Frequency Ratio %f
sync,min
Percent of f
s
80 %
SYNC Maximum Frequency f
sync,max
1.1 MHz
Synchronization Delay t
s,dly
From SYNC falling edge to GDRV falling
edge under open loop conditions
50 100 ns
Synchronization Duty Cycle D
sync
25 75 %
CURRENT SENSE AMPLIFIER
LowFrequency Gain
A
csa
Inputtooutput gain at dc, ISNS v 1 V 0.9 1.0 1.1 V/V
Bandwidth BW
csa
Gain of A
csa
3 dB 2.5 MHz
ISNS Input Bias Current I
sns,bias
Out of ISNS pin 30 50
mA
Current Limit Threshold Voltage V
cl
Voltage on ISNS pin 180 200 220 mV
Current Limit, Response Time t
cl
CL tripped until GDRV falling edge,
V
ISNS
= V
cl
(typ) + 60 mV
80 125 ns
Overcurrent Protection,
Threshold Voltage
%V
ocp
Percent of V
cl
125 150 175 %
Overcurrent Protection,
Response Time
t
ocp
From overcurrent event, Until switching
stops, V
ISNS
= V
OCP
+ 40 mV
125 ns
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
g
m,vea
V
FB
– V
ref
= ± 20 mV 0.8 1.2 1.63 mS
VEA Output Resistance R
o,vea
2.0
MW
VFB Input Bias Current I
vfb,bias
Current out of VFB pin 0.5 2.0
mA
Reference Voltage V
ref
1.176 1.200 1.224 V
VEA Maximum Output Voltage V
c,max
2.5 V
NCV887200
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5
ELECTRICAL CHARACTERISTICS (40°C < T
J
< 150°C, 4.8 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic UnitMaxTypMinConditionsSymbol
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
VEA Minimum Output Voltage
V
c,min
0.3 V
VEA Sourcing Current I
src,vea
VEA output current, Vc = 2.0 V 80 100
mA
VEA Sinking Current I
snk,vea
VEA output current, Vc = 0.7 V 80 100
mA
GATE DRIVER
Sourcing Current
I
src
V
DRV
6 V, V
DRV
V
GDRV
= 2 V 400 575 mA
Sinking Current I
sink
V
GDRV
2 V 250 375 mA
Driving Voltage Dropout V
drv,do
V
IN
V
DRV
, Iv
DRV
= 25 mA 0.3 0.6 V
Driving Voltage Source Current I
drv
V
IN
V
DRV
= 1 V 35 45 mA
Backdrive Diode Voltage Drop V
d,bd
V
DRV
V
IN
, I
d,bd
= 5 mA 0.7 V
Driving Voltage V
DRV
I
VDRV
= 0.1 25 mA 8.0 8.4 8.8 V
UVLO
Undervoltage LockOut,
Threshold Voltage
V
uvlo
V
IN
falling
V
IN
rising
4.6
4.75
5.23
4.90
5.45
V
Undervoltage LockOut,
Hysteresis
V
uvlo,hys
V
IN
rising 350 500 mV
SHORT CIRCUIT PROTECTION
Startup blanking period
%t
scp,dly
From start of softstart, Percent of t
ss
100 120 150 %
Hiccupmode period %t
hcp,dly
From shutdown to start of softstart,
Percent of t
ss
70 85 100 %
Short circuit threshold voltage %V
scp
V
FB
as percent of V
ref
60 67 75 %
Short circuit delay t
scp
From V
FB
< V
scp
to stop switching 35 100 ns
THERMAL SHUTDOWN
Thermal shutdown threshold
T
sd
T
J
rising 160 170 180 °C
Thermal shutdown hysteresis T
sd,hys
T
J
falling 10 15 20 °C
Thermal shutdown delay t
sd,dly
From T
J
> T
sd
to stop switching 100 ns
NCV887200
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6
TYPICAL PERFORMANCE CHARACTERISTICS
0
1
2
3
4
5
6
7
010203040
V
IN
, INPUT VOLTAGE (V)
Figure 2. Sleep Current vs. Input Voltage
I
q,sleep
, SLEEP CURRENT (mA)
T
J
= 25°C
3.5
4.0
4.5
5.0
5.5
0 200 400 600 800 1000
T
J
= 25°C,
V
IN
= 13.2 V
I
q,on
, QUIESCENTCURRENT (mA)
f
s
, SWITCHING FREQUENCY (kHz)
Figure 3. Quiescent Current vs. Switching
Frequency
Figure 4. Sleep Current vs. Temperature
3.32
3.34
3.36
3.38
3.40
3.42
3.46
40 10 60 110 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Quiescent Current vs. Temperature
115
117
119
121
123
125
t
on,min
MINIMUM ON TIME (ns)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Minimum On Time vs. Temperature
40 10 60 110 160
0.990
0.995
1.000
1.005
1.010
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Normalized Current Limit vs.
Temperature
40 10 60 110 160
NORMALIZED CURRENT LIMIT (25°C)
I
q,on
, QUIESCENTCURRENT (mA)
T
J
, JUNCTION TEMPERATURE (°C)
50 0 50 100 200
I
q,sleep
, SLEEP CURRENT (mA)
V
IN
= 13.2 V
0
1
2
3
4
5
6
150
3.44
V
IN
= 13.2 V
F
S
= 675 kHz

NCV887200D1R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers AUTOMOTIVE GRADE NON-SYNC
Lifecycle:
New from this manufacturer.
Delivery:
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