CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Ultrafast recovery time for high efficiency
- Built-in strain relief
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
t
rr
ns
C
J
pF
T
J
°C
T
STG
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1411072 Version: M15
US1A - US1M
Taiwan Semiconductor
1A, 50V - 1000V Hi
h Efficient Surface Mount Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AC (SMA)
DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Maximum repetitive peak reverse voltage
PARAMETER SYMBOL
US
1A
US
1B
US
1D
30
US
1J
US
1K
US
1M
UNIT
US
1G
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
1.0 V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
I
R
5
μA
150
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
R
θJL
R
θJA
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
27
75
Typical thermal resistance °C/W
1.7
50 75
15 10
