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2N6668

P1-P3P4-P4
2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ PNP DARLINGTON
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
■ GENERAL PURPOSE SWITCHING
■ GENERAL PURPOSE SWITCHING AND
AMPLIFIER
INTERNAL SCHEMATIC DIAGRAM
December 2000
R1(typ) = 8 kΩ R2(typ) = 120 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 250 mA
P
tot
Total Dissipation at T
c
≤ 25
o
C65W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP type voltage and current values are negative.
1
2
3
TO-220
®
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 80 V 1 mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V 5 mA
I
CEV
Collector Cut-off
Current (V
EB
= -1.5V)
V
CE
= 80 V 300 µA
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
B
=0)
I
C
= 200 mA 80 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.01 A
I
C
= 10 A I
B
= 0.1 A
2
3
V
V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.01 A
I
C
= 10 A I
B
= 0.1 A
2.8
4.5
V
V
h
FE
∗ DC Current Gain I
C
= 5 A V
CE
= 3 V
I
C
= 10 A V
CE
= 3 V
1000
100
20000
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
®
2N6668
2/4
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
®
2N6668
3/4
P1-P3P4-P4

2N6668

Mfr. #:
Buy 2N6668
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT PNP Pwr Darlington
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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