NXP Semiconductors
BAT754L
Schottky barrier triple diode
BAT754L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 22 November 2012 3 / 9
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature -65 150 °C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 416 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
F
= 0.1 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 200 mV
I
F
= 1 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 260 mV
I
F
= 10 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 340 mV
I
F
= 30 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 420 mV
V
F
forward voltage
I
F
= 100 mA; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 750 mV
I
R
reverse current V
R
= 25 V; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- - 2 µA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C - - 10 pF
