OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SBCW66GLT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
October, 2016 − Rev. 6
1 Publication Order Number:
BCW66GLT1/D
BCW66GLT1G,
SBCW66GLT1G
General Purpose Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
45 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
800 mAdc
Collector Current − Pulsed I
C
1200 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1), T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT−23
(TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
EG = Specific Device Code
M = Date Code*
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
BCW66GLT1G SOT−23
(Pb−Free)
3,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
EG MG
G
(*Note: Microdot may be in either location)
SBCW66GLT1G SOT−23
(Pb−Free)
3,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BCW66GLT3G SOT−23
(Pb−Free)
10,000/Tape & Ree
l
www.onsemi.com
BCW66GLT1G, SBCW66GLT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0) V
(BR)CEO
45 − − Vdc
Collector−Emitter Breakdown Voltage (I
C
= 10 mAdc, V
EB
= 0)
V
(BR)CES
75 − − Vdc
Emitter−Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 − − Vdc
Collector Cutoff Current
(V
CE
= 45 Vdc, I
E
= 0)
(V
CE
= 45 Vdc, I
E
= 0, T
A
= 150°C)
I
CES
−
−
−
−
20
20
nAdc
mAdc
Emitter Cutoff Current (V
EB
= 4.0 Vdc, I
C
= 0) I
EBO
− − 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
h
FE
50
110
160
60
−
−
−
−
−
−
400
−
−
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
−
−
−
−
0.7
0.3
Vdc
Base−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
− − 2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− − 12 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− − 80 pF
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
SWITCHING CHARACTERISTICS
Turn−On Time (I
B1
= I
B2
= 15 mAdc) t
on
− − 100 ns
Turn−Off Time (I
C
= 150 mAdc, R
L
= 150 W)
t
off
− − 400 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA) I
C
, COLLECTOR CURRENT (mA)
10001001010.1
0.01
0.1
1
10001001010.1
0.2
0.3
0.5
0.6
0.8
0.9
1.1
1.2
V
CE
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
0.4
0.7
1.0
I
C
/I
B
= 10
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
BCW66GLT1G, SBCW66GLT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Saturation Region
I
C
, COLLECTOR CURRENT (mA) I
B
, BASE CURRENT (mA)
10001001010.10.010.001
10
100
1000
1001010.1
0
0.2
0.6
0.8
1.0
1.4
1.8
2.0
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Capacitance
I
C
, COLLECTOR CURRENT (mA) V
R
, REVERSE VOLTAGE (V)
10001001010.1
0.2
0.3
0.4
0.5
0.7
0.8
0.9
1.0
1001010.1
1
10
100
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
Figure 8. Safe Operating Area
I
C
, COLLECTOR CURRENT (mA) V
CE
, COLLECTOR EMITTER VOLTAGE (V)
10001001010.1
10
100
1000
100101
1
10
100
1000
10,000
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(ON)
, BASE−EMITTER ON VOLTAGE (V)
C, CAPACITANCE (pF)
f
tau
, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
V
CE
= 2 V
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
0.4
1.2
1.6
T
A
= 25°C
I
C
= 800 mA500 mA200 mA100 mA
0.6
V
CE
= 2 V
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
f = 1 MHz
C
ibo
C
obo
V
CE
= 2 V
T
A
= 25°C
1 s 100 ms 10 ms 1 ms
0.1 ms,
0.01 ms
Single Pulse Test at T
A
= 25°C
P1-P3P4-P4

SBCW66GLT1G

Mfr. #:
Buy SBCW66GLT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR NPN 45V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet