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STTH1512GY-TR

P1-P3P4-P6P7-P9
This is information on a product in full production.
July 2013 DocID024059 Rev 1 1/9
STTH1512-Y
Automotive ultrafast recovery, high voltage diode
Datasheet − production data
Features
• Ultrafast, soft recovery
• Very low conduction and switching losses
• High frequency and/or high pulsed current
operation
• High reverse voltage capability
• High junction temperature
• AEC-Q101 qualified
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device for automotive applications.
Table 1. Device summary
Symbol Value
I
F(AV)
15 A
V
RRM
1200 V
T
j
175 °C
V
F
(typ) 1.20 V
t
rr
(typ) 53 ns
NC
A
DPAK
2
STTH1512GY
A
K
K
www.st.com
Characteristics STTH1512-Y
2/9 DocID024059 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.4 x I
F(AV)
+ 0.027 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
I
F(RMS)
Forward rms current D
2
PAK 50 A
I
F(AV)
Average forward current, δ = 0.5 D
2
PAK T
c
= 130 °C 15 A
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 200 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 200 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Operating junction temperature range -40 to + 175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case D
2
PAK 1.3 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
15
µA
T
j
= 125 °C 10 100
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 15 A
2.10
VT
j
= 125 °C 1.25 1.90
T
j
= 150 °C 1.20 1.80
DocID024059 Rev 1 3/9
STTH1512-Y Characteristics
9
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
105
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
53 75
I
RM
Reverse recovery current
I
F
= 15 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
20 28 A
S Softness factor
I
F
= 15 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
1.5
t
fr
Forward recovery time
I
F
= 15 A dI
F
/dt = 50 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25 °C
600 ns
V
FP
Forward recovery voltage
I
F
= 15 A, dI
F
/dt = 50 A/µs,
T
j
= 25 °C
5.5 V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus forward
current
0
5
10
15
20
25
30
35
0 2 4 6 8 1012141618
P(W)
T
δ
=tp/T
tp
δ = 0.05
δ = 1
I(A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I(A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current versus
dI
F
/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200 250 300 350 400 450 500
I(A)
RM
dI /dt(A/µs)
F
I =2 x I
FF(AV)
I=I
F F(AV)
I =0.5 x I
FF(AV)
V =600V
T =125°C
R
j
P1-P3P4-P6P7-P9

STTH1512GY-TR

Mfr. #:
Buy STTH1512GY-TR
Manufacturer:
STMicroelectronics
Description:
Rectifiers Auto ultrafast Recovry Hi VTG diode
Lifecycle:
New from this manufacturer.
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