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SQ4182EY-T1_GE3

P1-P3P4-P6P7-P8
SQ4182EY
www.vishay.com
Vishay Siliconix
S15-2402--Rev. C, 12-Oct-15
1
Document Number: 67917
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) 30
R
DS(on)
(Ω) at V
GS
= 10 V 0.0038
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.0050
I
D
(A) 32
Configuration Single
Package SO-8
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
32
A
T
C
= 125 °C 18
Continuous Source Current (Diode Conduction) I
S
6.4
Pulsed Drain Current
b
I
DM
100
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
60
Single Pulse Avalanche Energy E
AS
180 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
7.1
W
T
C
= 125 °C 2.3
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
80
°C/W
Junction-to-Foot (Drain) R
thJF
21
SQ4182EY
www.vishay.com
Vishay Siliconix
S15-2402--Rev. C, 12-Oct-15
2
Document Number: 67917
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 30 V - - 1
μA V
GS
= 0 V V
DS
= 30 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 30 V, T
J
= 175 °C - - 250
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
≥ 5 V 20 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 14 A - 0.0031 0.0038
Ω
V
GS
= 10 V I
D
= 14 A, T
J
= 125 °C - - 0.0060
V
GS
= 10 V I
D
= 14 A, T
J
= 175 °C - - 0.0070
V
GS
= 4.5 V I
D
= 10 A - 0.0040 0.0050
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 14 A - 107 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 15 V, f = 1 MHz
- 4313 5400
pF Output Capacitance C
oss
- 868 1090
Reverse Transfer Capacitance C
rss
- 305 390
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 15 V, I
D
= 20 A
-72110
nC Gate-Source Charge
c
Q
gs
-14-
Gate-Drain Charge
c
Q
gd
-8-
Gate Resistance R
g
f = 1 MHz 0.9 1.8 4.9 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= 15 V, R
L
= 1.5 Ω
I
D
≅ 10 A, V
GEN
= 10 V, R
g
= 1 Ω
-1624
ns
Rise Time
c
t
r
-1015
Turn-Off Delay Time
c
t
d(off)
-5786
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--100A
Forward Voltage V
SD
I
F
= 10 A, V
GS
= 0 V - 0.75 1.2 V
SQ4182EY
www.vishay.com
Vishay Siliconix
S15-2402--Rev. C, 12-Oct-15
3
Document Number: 67917
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
6
12
18
24
30
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
C
0.000
0.002
0.004
0.006
0.008
0.010
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
4
8
12
16
20
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55°C
T
C
= 125°C
T
C
= 25°C
0
30
60
90
120
150
0 3 6 9 12 15
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
1200
2400
3600
4800
6000
0 6 12 18 24 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

SQ4182EY-T1_GE3

Mfr. #:
Buy SQ4182EY-T1_GE3
Manufacturer:
Vishay
Description:
MOSFET N-CHANNEL 30V 32A 8SOIC
Lifecycle:
New from this manufacturer.
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