Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF640, IRF640S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
Non-repetitive avalanche Unclamped inductive load, I
AS
= 6.2 A; - 580 mJ
energy t
p
= 720 µs; T
j
prior to avalanche = 25˚C;
V
DD
≤ 25 V; R
GS
= 50 Ω; V
GS
= 10 V; refer
to fig;14
I
AS
Peak non-repetitive - 16 A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 1.1 K/W
to mounting base
R
th j-a
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 0.25 mA; 200 - - V
voltage T
j
= -55˚C 178 - - V
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 2 3 4 V
T
j
= 175˚C 1 - - V
T
j
= -55˚C - 6 V
R
DS(ON)
Drain-source on-state V
GS
= 10 V; I
D
= 8 A - 130 180 mΩ
resistance T
j
= 175˚C - - 522 mΩ
I
GSS
Gate source leakage current V
GS
= ± 20 V; V
DS
= 0 V - 10 100 nA
I
DSS
Zero gate voltage drain V
DS
= 200 V; V
GS
= 0 V; - 0.05 10 µA
current V
DS
= 160 V; V
GS
= 0 V; T
j
= 175˚C - - 250 µA
Q
g(tot)
Total gate charge I
D
= 18 A; V
DD
= 160 V; V
GS
= 10 V - - 63 nC
Q
gs
Gate-source charge - - 12 nC
Q
gd
Gate-drain (Miller) charge - - 35 nC
t
d on
Turn-on delay time V
DD
= 100 V; R
D
= 5.6 Ω; - 12 - ns
t
r
Turn-on rise time V
GS
= 10 V; R
G
= 5.6 Ω -45-ns
t
d off
Turn-off delay time Resistive load - 54 - ns
t
f
Turn-off fall time - 38 - ns
L
d
Internal drain inductance Measured tab to centre of die - 3.5 - nH
L
d
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
L
s
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 1850 - pF
C
oss
Output capacitance - 170 - pF
C
rss
Feedback capacitance - 91 - pF
August 1999 2 Rev 1.100
