April 2011 Doc ID 16592 Rev 3 1/10
10
LET9045F
RF power transistor from the LdmoST family
of n-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
(@28 V) = 45 W with 18.5 dB gain @ 960
MHz
■ P
OUT
(@36V) = 70 W with 18.5 dB gain @ 960
MHz
■ BeO free package
■ In compliance with the 2002/95/EC European
directive
Description
The LET9045F is a common source n-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The LET9045F is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for base
station applications requiring high linearity.
Figure 1. Pin out
M250
epoxy sealed
1
3
2
1. Drain
2. Gate
3. Source
Table 1. Device summary
Order code Package Branding
LET9045F M250 LET9045F
www.st.com
