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APTGT50H120T3G

P1-P3P4-P6
APTGT50H120T3G
APTGT50H120T3G – Rev 2 October, 2012
1-6
www.microsemi.com
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200
V
T
C
= 25°C
75
I
C
Continuous Collector Current
T
C
= 80°C
50
I
CM
Pulsed Collector Current T
C
= 25°C 100
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
C
= 25°C
270 W
RBSOA Reverse Bias Safe Operating Area
T
J
= 125°C
100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
16
15
182023 22
13
11
12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Fast Trench + Field Stop IGBT3
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive T
C
of V
CEsat
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
Fast Trench + Field Stop IGBT3
Power Module
APTGT50H120T3G
APTGT50H120T3G – Rev 2 October, 2012
2-6
www.microsemi.com
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 250
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125°C 500
µA
T
j
= 25°C 1.4 1.7 2.1
V
CE(sat)
Collector Emitter saturation Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125°C 2.0
V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 2mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 3600
C
rss
Reverse Transfer Capacitance
V
GE
= 0V,V
CE
= 25V
f = 1MHz
160
pF
T
d(on)
Turn-on Delay Time 90
T
r
Rise Time 30
T
d(off)
Turn-off Delay Time 420
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
70
ns
T
d(on)
Turn-on Delay Time 90
T
r
Rise Time 50
T
d(off)
Turn-off Delay Time 520
T
f
Fall Time
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
90
ns
E
on
Turn-on Switching Energy T
j
= 125°C 5
E
off
Turn-off Switching Energy
V
GE
= ±15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
T
j
= 125°C 5.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
T
j
= 25°C 250
I
RM
Maximum Reverse Leakage Current V
R
=1200V
T
j
= 125°C 500
µA
I
F
DC Forward Current
Tc = 70°C 60 A
I
F
= 60A 2 2.5
I
F
= 120A 2.3
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125°C
1.8
V
T
j
= 25°C 400
t
rr
Reverse Recovery Time
T
j
= 125°C 470
ns
T
j
= 25°C 1200
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 800V
di/dt =200A/µs
T
j
= 125°C 4000
nC
E
r
Reverse Recovery Energy
I
F
= 60A
V
R
= 800V
di/dt =1000A/µs
T
j
= 125°C 2.2 mJ
APTGT50H120T3G
APTGT50H120T3G – Rev 2 October, 2012
3-6
www.microsemi.com
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
k
B
25/85
T
25
= 298.15 K 3952
K
TT
B
R
R
T
11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT
0.45
R
thJC
Junction to Case Thermal Resistance
Diode 0.9
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 110
g
SP3 Package outline (dimensions in mm)
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
P1-P3P4-P6

APTGT50H120T3G

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Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules DOR CC3148
Lifecycle:
New from this manufacturer.
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