VS-110RKI...PbF, VS-111RKI...PbF Series
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Vishay Semiconductors
Revision: 01-Mar-17
6
Document Number: 94379
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001
94379_09
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 1000100
(1) P
GM
= 12 W, t
p
= 5 ms
(2) P
GM
= 30 W, t
p
= 2 ms
(3) P
GM
= 60 W, t
p
= 1 ms
(4) P
GM
= 200 W, t
p
= 300 μs
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
r
≤ 0.5 μs, t
p
≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
≤ 1 μs, t
p
≥ 6 μs
(b)
(a)
T
J
= 25 °C
T
J
= 140 °C
T
J
= 40 °C
V
GD
I
GD
(1) (2) (3) (4)
Frequency limited by P
G(AV)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003
Device code
5 761 32 4
11VS- 0 RKI 120 M PbF
-I
T(AV)
rated average output current (rounded/10)
3
- Thyristor
4
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
5
6
-
None = stud base1/2"-20UNF-2A threads
M = stud base metric threads M12 x 1.75 E 6
2
-
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
1
- Vishay Semiconductors product
7 -
None = standard production
PbF = lead (Pb)-free