VS-110RKI...PbF, VS-111RKI...PbF Series
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Vishay Semiconductors
Revision: 01-Mar-17
3
Document Number: 94379
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
5 ms 12
W
Maximum average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 3.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms
3.0 A
Maximum peak positive gate voltage + V
GM
20
V
Maximum peak negative gate voltage - V
GM
10
DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
180 -
mAT
J
= 25 °C 80 120
T
J
= 140 °C 40 -
DC gate voltage required to trigger V
GT
T
J
= - 40 °C 2.5 -
VT
J
= 25 °C 1.6 2
T
J
= 140 °C 1 -
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with
rated V
DRM
anode to
cathode applied
6.0 mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
J
-40 to +140
°C
Maximum storage temperature range T
Stg
-40 to +150
Maximum thermal resistance, junction to case R
thJC
DC operation 0.27
K/W
Maximum thermal resistance, case to heatsink R
thCS
Mounting surface, smooth, flat and greased 0.1
Mounting torque, ± 10 %
Non-lubricated threads
15.5
(137)
N · m
(lbf · in)
Lubricated threads
14
(120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.043 0.031
T
J
= T
J
maximum K/W
120° 0.052 0.053
90° 0.066 0.071
60° 0.096 0.101
30° 0.167 0.169
