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VS-111RKI120PBF

P1-P3P4-P6P7-P8
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
4
Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
8040 6020 100
120
0
140
130
120
110
100
90
80
94379_01
30°
60°
90°
120°
180°
Ø
Conduction angle
R
thJC
(DC) = 0.27 K/W
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
20 40 10060 14012080 160 1800
70
80
90
100
110
120
140
130
94379_02
30°
60°
DC
90°
120°
180°
Conduction period
Ø
R
thJC
(DC) = 0.27 K/W
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
40 80 100 120
0
60
20
160
140
120
100
80
60
40
20
0
94379_03a
RMS limit
180°
120°
90°
60°
30°
Ø
Conduction angle
T
J
= 140 °C
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
20 6040 80 100 120 140
0
160
140
120
100
80
60
40
20
0
94379_03b
2 K/W
4 K/W
5 K/W
1.5 K/W
1 K/W
0.8 K/W
0.6 K/W
R
thSA
= 0.3 K/W - ΔR
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Ambient Temperature (°C)
20 40 8060 100 120 140
0
220
200
180
160
120
80
40
20
140
100
60
0
94379_04b
2 K/W
4 K/W
5 K/W
1.5 K/W
1 K/W
0.8 K/W
0.6 K/W
R
thSA
= 0.3 K/W - ΔR
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
60 140 180
0
100 160
20
80 120
40
220
180
140
100
200
160
120
60
80
40
20
0
94379_04a
DC
180°
120°
90°
60°
30°
RMS limit
T
J
= 140 °C
Conduction period
Ø
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
5
Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Peak Half Sine Wave
On-State Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
800
1000
1200
1800
1600
1400
2000
94379_05
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 140 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
Pulse Train Duration (s)
0.1 1010.01
500
1000
1500
2000
2500
94379_06
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 140 °C
No voltage reapplied
Rated V
RRM
reapplied
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
012345
1
100
10
10 000
1000
94379_07
T
J
= 140 °C
T
J
= 25 °C
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (K/W)
94379_08
Steady state value
R
thJC
= 0.27 K/W
(DC operation)
VS-110RKI...PbF, VS-111RKI...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-17
6
Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001
94379_09
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 1000100
(1) P
GM
= 12 W, t
p
= 5 ms
(2) P
GM
= 30 W, t
p
= 2 ms
(3) P
GM
= 60 W, t
p
= 1 ms
(4) P
GM
= 200 W, t
p
= 300 μs
Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 20 V, 30 Ω,
t
r
≤ 0.5 μs, t
p
≥ 6 μs
(b) Recommended load line for
≤ 30 % rated dI/dt: 15 V, 40 Ω,
t
r
≤ 1 μs, t
p
≥ 6 μs
(b)
(a)
T
J
= 25 °C
T
J
= 140 °C
T
J
= 40 °C
V
GD
I
GD
(1) (2) (3) (4)
Frequency limited by P
G(AV)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95003
Device code
5 761 32 4
11VS- 0 RKI 120 M PbF
-I
T(AV)
rated average output current (rounded/10)
3
- Thyristor
4
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
5
6
-
None = stud base1/2"-20UNF-2A threads
M = stud base metric threads M12 x 1.75 E 6
2
-
0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
1
- Vishay Semiconductors product
7 -
None = standard production
PbF = lead (Pb)-free
P1-P3P4-P6P7-P8

VS-111RKI120PBF

Mfr. #:
Buy VS-111RKI120PBF
Manufacturer:
Vishay Semiconductors
Description:
SCRs 110 Amp 1200 Volt 172 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
Delivery:
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