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VS-40CTQ150STRR-M3

P1-P3P4-P6P7-P8
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-Jul-14
1
Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• Very low forward voltage drop
• 175 °C T
J
operation
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
2 x 20 A
V
R
150 V
V
F
at I
F
0.71 V
I
RM
15 mA at 125 °C
T
J
max. 175 °C
Diode variation Common cathode
E
AS
1 mJ
TO-263AB (D
2
PAK) TO-262AA
V
S-40CTQ150S-M3 VS-40CTQ150-1-M3
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
150 V
I
FSM
t
p
= 5 μs sine 1500 A
V
F
20 A
pk
, T
J
= 125 °C (per leg) 0.71 V
T
J
-55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-40CTQ150S-M3
VS-40CTQ150-1-M3
UNITS
Maximum DC reverse voltage V
R
150 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
per leg
I
F(AV)
50 % duty cycle at T
C
= 140 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle non-repetitive surge
current per leg See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1500
10 ms sine or 6 ms rect. pulse 250
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1.5 A, L = 0.9 mH 1.0 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.5 A
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-Jul-14
2
Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.93
V
40 A 1.16
20 A
T
J
= 125 °C
0.71
40 A 0.85
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
50 μA
T
J
= 125 °C 15 mA
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 450 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-55 to +175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
1.5
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 0.75
Typical thermal resistance, case to heatsink R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style D
2
PAK 40CTQ150S
Case style TO-262 40CTQ150-1
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 29-Jul-14
3
Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.8 1.2 1.60
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
4020 60 80
160
100 120 140
0
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
40 80
160
120
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P8

VS-40CTQ150STRR-M3

Mfr. #:
Buy VS-40CTQ150STRR-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
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