ZXMN10A08DN8
SEMICONDUCTORS
ISSUE 4 - JANUARY 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage V
(BR)DSS
100 V I
D
=250A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5 AV
DS
=100V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=⫾20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
2.0 V I
D
=250A, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS(on)
0.25
0.30
⍀
⍀
V
GS
=10V, I
D
=3.2A
V
GS
=6V, I
D
=2.6A
Forward transconductance
(1)(3)
g
fs
5.0 S V
DS
=15V,I
D
=3.2A
DYNAMIC
(3)
Input capacitance C
iss
405 pF
V
DS
=50 V, V
GS
=0V,
f=1MHz
Output capacitance C
oss
28.2 pF
Reverse transfer capacitance C
rss
14.2 pF
SWITCHING
(2) (3)
Turn-on delay time t
d(on)
3.4 ns
V
DD
=30V, I
D
=1.2A
R
G
≅6.0⍀,V
GS
=10V
Rise time t
r
2.2 ns
Turn-off delay time t
d(off)
8ns
Fall time t
f
3.2 ns
Gate charge Q
g
4.2 nC V
DS
=50V,V
GS
=5V,
I
D
=1.2A
Total gate charge Q
g
7.7 nC
V
DS
=50V,V
GS
=10V,
I
D
=1.2A
Gate-source charge Q
gs
1.8 nC
Gate-drain charge Q
gd
2.1 nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.87 0.95 V T
J
=25°C, I
S
=3.2A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
27 ns T
J
=25°C, I
F
=1.2A,
di/dt= 100A/s
Reverse recovery charge
(3)
Q
rr
32 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES:
(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
