ZXMN10A08DN8
SEMICONDUCTORS
ISSUE 4 - JANUARY 2005
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R
θJA
100 °C/W
Junction to ambient (b) R
θJA
69 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DSS
100 V
Gate source voltage V
GS
20 V
Continuous drain current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
I
D
2.1
1.7
1.6
A
Pulsed drain current
(c)
I
DM
9A
Continuous source current (body diode)
(b)
I
S
2.6 A
Pulsed source current (body diode)
(c)
I
SM
9A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.25
10
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.8
14.5
W
mW/°C
Operating and storage temperature range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
