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HMC320MS8GTR

P1-P3P4-P6P7-P7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
8 - 22
Noise Figure
@ Th
ree Bias Conditions
Input IP3 @ Three Bias Conditions
Output 1dB Compression
@ Three Bias Conditions
Reverse Isolation
@ Three Bias Conditions
0
1
2
3
4
5
4.5 5 5.5 6 6.5
Low Power Bias
Medium Power Bias
High Power Bias
NOISE FIGURE (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
4 4.5 5 5.5 6 6.5 7
Low Power Bias
Medium Power Bias
High Power Bias
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
-5
-3
-1
1
3
5
7
9
11
13
15
4.5 5 5.5 6 6.5
Low Power Bias
Medium Power Bias
High Power Bias
P1dB (dBm)
FREQUENCY (GHz)
-5
0
5
10
15
4.5 5 5.5 6 6.5
Low Power Bias
Medium Power Bias
High Power Bias
IP3 (dBm)
FREQUENCY (GHz)
HMC320MS8G / 320MS8GE
GaAs MMIC LOW NOISE
AMPLIFIER , 5 - 6 GHz
v03.0308
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
8 - 23
Adaptive Biasing
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include sens-
ing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either
analog or digitals means, after the RF signal has been detected and translated to a DC voltage using
external power detection circuitry.
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC-
320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET
voltage source to provide 100uA of current to the ampli er. The Idd and Vdd quiescent performance will not change
as a function of changing the VSET voltage.
RF Performance at 5.8 GHz (Vdd = +3V)
Schematic
VSET
(VDC)
RBIAS Resistor
Between Pin 3 and
GND (Ohms)
Idd (mA)
Output
P1dB (dBm)
Output
Return Loss
(dB)
0 174 7 1.0 16.0
3 22 25 9.0 12.0
3 7 40 13.0 15.0
3
GND
(No Resistor)
60 14.0 15.0
HMC320MS8G / 320MS8GE
GaAs MMIC LOW NOISE
AMPLIFIER , 5 - 6 GHz
v03.0308
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
8 - 24
Absolute Maximum Ratings
Outline Drawing
Truth Table
Set external bias resistor (RBIAS) to achieve desired operat-
ing current, 0 < RBIAS < 200 Ohm.
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Drain Bias Voltage (Vdd) +7.0 Vdc
Control Voltage Range (VSET) 0 to Vdd
RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 2.98 mW/°C above 85 °C)
0.194 W
Thermal Resistance
(channel to ground paddle)
336 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
VSET
Operating
Current Idd
Operating
State
Resistor Rbias
0V 7 mA Low Power 174 Ohm
3V 25 mA Medium Power 22 Ohm
3V 40 mA High Power 7 Ohm
HMC320MS8G / 320MS8GE
GaAs MMIC LOW NOISE
AMPLIFIER , 5 - 6 GHz
v03.0308
Part Number Package Body Material Lead Finish MSL Rating Package Marking
[3]
HMC320MS8G Low Stress Injection Molded Plastic Sn/Pb Solder
MSL1
[1]
H320
XXXX
HMC320MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
MSL1
[2]
H320
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6P7-P7

HMC320MS8GTR

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Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier GaAs MMIC lo Noise Amplifer , 5 - 6 GHz
Lifecycle:
New from this manufacturer.
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