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IXTA18P10T

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY18P10T IXTA18P10T
IXTP18P10T
Fig. 7. Input Admittance
-24
-20
-16
-12
-8
-4
0
-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
-24-22-20-18-16-14-12-10-8-6-4-20
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 9A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
-
-
-
-- -
-
100ms
-
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY18P10T IXTA18P10T
IXTP18P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
21
22
23
24
25
26
27
28
29
30
-18-17-16-15-14-13-12-11-10-9
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω , V
GS
= -10V
V
DS
= - 50V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
14
16
18
20
22
24
26
28
30
10 12 14 16 18 20 22 24 26 28 30
R
G
- Ohms
t
r
- Nanoseconds
0
10
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GS
= -10V
V
DS
= - 50V
I
D
= -18A, - 9A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
19
20
21
22
23
24
25
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
34
38
42
46
50
54
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 10Ω, V
GS
= -10V
V
DS
= - 50V
I
D
= -18A, - 9A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
30
33
36
39
42
45
48
51
54
-18-17-16-15-14-13-12-11-10-9
I
D
- Amperes
t
f
- Nanoseconds
19
20
21
22
23
24
25
26
27
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
R
G
= 10Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
21
22
23
24
25
26
27
28
29
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GS
= -10V
V
DS
= - 50V
I
D
= - 9A
I
D
= -18A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
15
20
25
30
35
40
45
50
55
60
65
10 12 14 16 18 20 22 24 26 28 30 32 34
R
G
- Ohms
t
f
- Nanoseconds
10
20
30
40
50
60
70
80
90
100
110
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= -10V
V
DS
= - 50V
I
D
= - 9A, -18A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY18P10T IXTA18P10T
IXTP18P10T
IXYS REF: T_18P10T(A1-810) 11-05-10-A
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E
A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e
c
e1
e1
3X b2
e
3X b
EJECTOR
PIN
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E
A
c2
H
A1
A2
L2
L
A
e
c
0
e1 e1 e1 e1 e1
OPTIONAL
5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
2
3
4
L3
A2
A1
e
c
e
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
P1-P3P4-P6

IXTA18P10T

Mfr. #:
Buy IXTA18P10T
Manufacturer:
Littelfuse
Description:
MOSFET 18 Amps 100V 0.12 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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