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PTVA104501EH-V1-R250

P1-P3P4-P6P7-P9P10-P10
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14
PTVA104501EH
Thermally-Enhanced High Power RF LDMOS FET
450 W, 50 V, 960 – 1215 MHz
Description
The PTVA104501EH LDMOS FET is designed for use in power ampli-
fier applications in the 960 to 1215 MHz frequency band. Features
include high gain and thermally-enhanced package with bolt-down
flange. Manufactured with Wolfspeed's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA104501EH
Package H-33288-2
Features
• Broadband internal input and output matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 450 W peak under RF pulse,
128 µS, 10% duty cycle.
15
25
35
45
55
65
15
25
35
45
55
65
28 30 32 34 36 38 40 42 44
Efficiency (%)
P
OUT
(dBm)
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 200 mA, T
CASE
= 25°C,
128 µs pulse width, 10% duty cycle
960 MHz
1030 Mhz
1090 MHz
1150 MHz
1215 MHz
Output power
Efficiency
a104501eh_g1
RF Characteristics
Pulsed RF Performance (tested in Wolfspeed test fixture)
V
DD
= 50 V, I
DQ
= 200 mA, P
OUT
= 450 W (peak), ƒ
1
= 960 MHz, ƒ
2
= 1090 MHz, ƒ
3
= 1215 MHz, RF pulse 128 µs,
10% duty cycle
Characteristic Symbol Min Typ Max Unit
Gain G
ps
16.5 17.5 — dB
Drain Efficiency
h
D
53 58 — %
Gain Flatness DG — 0.85 1.8 dB
Return Loss IRL — –9.5 –6 dB
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-14
2
PTVA104501EH
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V(
BR)DSS
105 — — V
Drain Leakage Current V
DS
= 50 V, V
GS
= 0 V I
DSS
— — 1 µA
V
DS
= 111 V, V
GS
= 0 V I
DSS
— — 10 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.1 — W
Operating Gate Voltage V
DS
= 50 V, I
DQ
= 200 mA V
GS
3.0 3.5 4.0 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
105 V
Gate-Source Voltage V
GS
–6 to +12 V
Operating Voltage V
DD
0 to +55 V
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Thermal Resistance R
qJC
0.25 °C/W
(T
CASE
= 70°C, 430 W CW, ƒ = 1090 MHZ, V
DD
= 50 V, I
DQ
= 200 mA)
Ordering Information
Type and Version Order Code Package Description Shipping
PTVA104501EH V1 R0 PTVA104501EH-V1-R0 H-33288-2 Tape & Reel, 50 pcs
PTVA104501EH V1 R250 PTVA104501EH-V1-R250 H-33288-2 Tape & Reel, 250 pcs
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture)
V
DD
= 50 V, I
DQ
= 200 mA, Input signal (t
r
= 7.0 ns, t
f
= 7.0 ns), 128 µs pulse width, 10% duty cycle, class AB test
Mode of
Operation
ƒ
(MHz)
IRL
(dB)
P
1dB
P
3dB
Max
P
droop (pulse)
@ P
1dB
t
r (ns)
@P
1dB
t
f (ns)
@P
1dB
Gain
(dB)
Eff
(%)
P
OUT
(W)
Gain
(dB)
Eff
(%)
P
OUT
(W)
128 µs, 10% 960 –7.5 18.0 56 460 16.0 53 490 0.15 5 <2
1030 –13.0 18.5 59 470 16.5 60 540 0.15 5 <2
1090 –8.0 17.8 61 510 15.8 61 590 0.20 5 <2
1150 –15.0 18.1 59 540 16.1 60 620 0.20 5 <2
1215 –9.0 18.3 56 460 16.3 53 510 0.20 5 <2
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 03, 2018-06-14
3
PTVA104501EH
Typical RF Performance (data taken in production test fixture)
15
25
35
45
55
65
15
25
35
45
55
65
28 30 32 34 36 38 40 42 44
Efficiency (%)
P
OUT
(dBm)
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 200 mA, T
CASE
= 25°C,
128 µs pulse width, 10% duty cycle
960 MHz
1030 Mhz
1090 MHz
1150 MHz
1215 MHz
Output power
Efficiency
a104501eh_g1
12
14
16
18
20
22
28 30 32 34 36 38 40 42 44
Gain (dB)
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 200 mA, T
CASE
= 25°C,
128 µs pulse width, 10% duty cycle
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
Gain
a104501eh_g2
50
55
60
65
70
16
17
18
19
20
900 1000 1100 1200 1300
Efficiency (%)
Gain (dB)
Frequency (MHz)
Pulsed RF Performance
V
DD
= 50V, I
DQ
= 200mA, P
OUT
= 450W (peak),
128 µs pulse width, 10% duty cycle
a104501eh_g3
Gain
Efficiency
0.0
0.1
0.2
0.3
-25
-20
-15
-10
-5
900 1000 1100 1200 1300
Power Droop (dB)
IRL (dB)
Frequency (MHz)
Pulsed RF Performance
V
DD
= 50V, I
DQ
= 200mA, P
OUT
= 450W (peak),
128 µs pulse width, 10% duty cycle
Power Droop
IRL
a104501eh_g4
P1-P3P4-P6P7-P9P10-P10

PTVA104501EH-V1-R250

Mfr. #:
Buy PTVA104501EH-V1-R250
Manufacturer:
N/A
Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
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