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SMMUN2214LT1G

P1-P3P4-P6P7-P9P10-P12
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114YF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.2
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 140 −
Collector *Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 0.7 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 1.0 mA)
V
i(on)
1.4 0.8 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 7.0 10 13
kW
Resistor Ratio R
1
/R
2
0.17 0.21 0.25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
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5
TYPICAL CHARACTERISTICS
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3
1000
100
10
1
Figure 2. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
01020
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001
01234
V
in
, INPUT VOLTAGE (V)
5678910
Figure 6. Input Voltage vs. Output Current
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
−55°C
150°C
25°C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
150°C
−55°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030
0.1 1
10010
V
CE
= 10 V
25°C
150°C
−55°C
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
010 20304050
100
10
1
0.1
150°C
−55°C
MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS
NSBC114YF3
1000
100
10
1
Figure 7. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
01020
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001
01234
V
in
, INPUT VOLTAGE (V)
567
Figure 11. Input Voltage vs. Output Current
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
−55°C
150°C
25°C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
150°C
−55°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030
0.1 1
10010
V
CE
= 10 V
25°C
150°C
−55°C
2.4
010 20304050
100
10
1
0.1
150°C
−55°C
2
1.6
1.2
0.8
0.4
0
P1-P3P4-P6P7-P9P10-P12

SMMUN2214LT1G

Mfr. #:
Buy SMMUN2214LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS BR XSTR SPCL TR
Lifecycle:
New from this manufacturer.
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