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2DD1664R-13

P1-P3P4-P6
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
© Diodes Incorporated
2DD1664P/Q/
R
32V NPN SUFACE MOUNT TRANSISTOR IN SOT89
Features
• BV
CEO
> 32V
• Max Continuous Current I
C
= 1A
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (2DB1132)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT89
• Case Material: Molded Plastic. “Green” Molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.055 grams (Approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
2DD1664P-13 N13P 13 12 2,500
2DD1664Q-13 N13Q 13 12 2,500
2DD1664R-13 N13R 13 12 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
Top View Device Symbol Pin Out – Top View
SOT89
C
E
B
N13x = Product Type Marking Code:
Where N13P = 2DD1664P
N13Q = 2DD1664Q
N13R = 2DD1664R
YWW = Date Code Marking
Y = Last digit of year ex: 1 = 2011
WW = Week code (01 – 53)
N13x
YWW
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
2DD1664P/Q/
R
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
32 V
Emitter-Base Voltage
V
EBO
6 V
Continuous Collector Current
I
C
1 A
Peak Pulse Current (Note 6)
I
CM
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
125
°C/W
Thermal Resistance, Junction to Leads (Note 7)
R
θJL
22
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 5. For a device surface mounted on FR-4 PCB with minimum suggested pad layout; high coverage of single sided 1 oz copper, in still air conditions
6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
0
0.2
0.4
25 50
75 100 125
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Power Dissipation vs. Ambient Temperature
0.6
0.8
1.0
0
2DD1664P/Q/R
Document number: DS31143 Rev. 5 - 2
3 of 6
www.diodes.com
July 2012
© Diodes Incorporated
2DD1664P/Q/
R
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
40
-
- V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
32
-
- V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
6
-
- V
I
E
= 100µA
Collector-Emitter Cut-off Current
I
CES
- - 100 nA
V
CE
= 32V
Collector-Base Cut-off Current
I
CBO
- - 100 nA
V
CB
= 36V
Base-Emitter Cut-off Current
I
EBO
- - 100 nA
V
EB
= 6V
Static Forward Current Transfer
Ratio (Note 8)
2DD1664P
h
FE
82
-
180
-
I
C
= 100mA, V
CE
= 3V
2DD1664Q 120 270
2DD1664R 180 390
Collector-Emitter saturation Voltage (Note 8)
V
CE
(
sat
)
- 120 400 mV
I
C
= 500mA, I
B
= 50mA
Transition frequency
f
T
- 280 - MHz
I
E
= 50mA, V
CE
= 5V, f = 30MHz
Output Capacitance
C
ob
- 10 - pF
I
E
= 0A, V
CB
= 10V, f = 1MHz
Notes: 8. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
0.001 0.01 0.1 1 10
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 3V
CE
P1-P3P4-P6

2DD1664R-13

Mfr. #:
Buy 2DD1664R-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 1000W 32Vceo
Lifecycle:
New from this manufacturer.
Delivery:
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