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NX5P2924CUKZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
NX5P2924C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 2 — 8 October 2015 4 of 20
NXP Semiconductors
NX5P2924C
Logic controlled high-side power switch
9. Application diagram
The NX5P2924C is typically used in portable, battery operated device. Pin EN enables
the NX5P2924C. Slew rate controlled in-rush current reduction circuits function during
switching.
The VOUT discharge circuit will be active when NX5P2924C main FET is switched off by
pulling EN pin low. The circuit will discharge the VOUT voltage through approximately
1.3 k resistance to GND. The discharge circuit will automatically be disconnected after
VOUT drops below 10 % of the rail.
Fig 5. NX5P2924C application diagram
aaa-018032
NX5P2924C
VIN
GND
EN
EN
VOUT
C
OUT
0.1 µF
C
IN
1.0 µF
NX5P2924C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 2 — 8 October 2015 5 of 20
NXP Semiconductors
NX5P2924C
Logic controlled high-side power switch
10. Limiting values
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.
[3] The (absolute) maximum power dissipation depends on the junction temperature T
j
. Higher power dissipation is allowed in conjunction
with lower ambient temperatures. The conditions to determine the specified values are T
amb
= 85 °C and the use of a two layer PCB.
11. Recommended operating conditions
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
I
input voltage input EN
[1]
0.5 +6.0 V
input VIN
[2]
0.5 +6.0 V
V
SW
switch voltage output VOUT
[2]
0.5 V
I(VIN)
V
I
IK
input clamping current input EN: V
I(EN)
< 0.5 V 50 - mA
I
SK
switch clamping current input VIN: V
I(VIN)
< 0.5 V 50 - mA
output VOUT: V
O(VOUT)
< 0.5 V 50 - mA
output VOUT: V
O(VOUT)
>V
I(VIN)
0.5 V - 50 mA
I
SW
switch current V
SW
> 0.5 V - 2500 mA
pulsed, 100 ms pulse, 2 % duty cycle - 5000 mA
T
j(max)
maximum junction
temperature
40 +125 C
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation
[3]
- 470 mW
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Max Unit
V
I
input voltage input EN 0 5.5 V
input VIN 0.8 5.5 V
T
amb
ambient temperature 40 +85 C
NX5P2924C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 2 — 8 October 2015 6 of 20
NXP Semiconductors
NX5P2924C
Logic controlled high-side power switch
12. Thermal characteristics
[1] R
th(j-a)
is dependent upon board layout. To minimize R
th(j-a)
, ensure that all pins have a solid connection to larger copper layer areas. In
multi-layer PCBs, the second layer should be used to create a large heat spreader area below the device. Avoid using solder-stop
varnish under the device.
13. Static characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient
[1]
139 K/W
Table 8. Static characteristics
V
I(VIN)
= 1.0 V to 5.5 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +85 C Unit
Min Typ
[1]
Max Min Max
V
IH
HIGH-level input
voltage
EN input; V
I(VIN)
= 0.8 V 0.6 - - 0.6 - V
EN input; V
I(VIN)
= 1.0 V to 1.2 V 0.9 - - 0.9 - V
EN input; V
I(VIN)
= 1.2 V to 2.5 V 1.2 - - 1.2 - V
EN input; V
I(VIN)
= 2.5 V to 5.5 V 1.2 - - 1.2 - V
V
IL
LOW-level input
voltage
EN input; V
I(VIN)
= 0.8 V - - 0.25 - 0.25 V
EN input; V
I(VIN)
= 1.0 V to 1.2 V - - 0.3 - 0.3 V
EN input; V
I(VIN)
= 1.2 V to 2.5 V - - 0.4 - 0.4 V
EN input; V
I(VIN)
= 2.5 V to 5.5 V - - 0.6 - 0.6 V
I
I
input leakage
current
EN input; V
I(EN)
= 0.9 V to 5.5 V - - - - 0.1 A
R
dch
discharge
resistance
VOUT output; V
I(VIN)
= 0.8 V - 4.00 - - - k
VOUT output; V
I(VIN)
= 1.0 V - 1.40 - - - k
VOUT output; V
I(VIN)
= 1.2 V - 1.30 - - - k
VOUT output; V
I(VIN)
= 1.8 V - 1.27 1.50 - - k
VOUT output; V
I(VIN)
= 3.3 V - 1.25 1.50 - - k
VOUT output; V
I(VIN)
= 5.5 V - 1.25 1.50 - - k
I
DD
supply current VOUTopen
EN = HIGH; V
I(VIN)
=1.0V;
see Figure 6
and Figure 7
-35- - 50 A
EN = HIGH; V
I(VIN)
=1.8V;
see Figure 6
and Figure 7
-35- - 50 A
EN = HIGH; V
I(VIN)
=3.6V;
see Figure 6
and Figure 7
-50- - 70 A
EN = HIGH; V
I(VIN)
=5.5V;
see Figure 6 and Figure 7
-85- - 110A
EN = LOW;
see Figure 8
and Figure 9
-0.1- - 1.5 A
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NX5P2924CUKZ

Mfr. #:
Buy NX5P2924CUKZ
Manufacturer:
NXP Semiconductors
Description:
Power Switch ICs - Power Distribution NX5P2924CUK/UNCASED///REEL 7 Q1 DP CHIPS
Lifecycle:
New from this manufacturer.
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